Investigation of interface characteristics of Al₂O₃/Si under various O₂ plasma exposure times during the deposition of Al₂O₃ by PA-ALD

Chemical Compounds

• Atomic Layer Epitaxy 75%
• Charge Density 8%
• Chemical Passivation 28%
• Deposition Process 20%
• Interface Trap 15%
• Plasma 40%
• Probe 5%
• Refractive Index 8%
• Surface Damage 28%
• Thermal Stability 6%
• Time 23%
• Trap Density Measurement 14%

Engineering & Materials Science

• Aluminum oxide 62%
• Atomic layer deposition 100%
• Charge density 7%
• Electric potential 5%
• Passivation 19%
• Plasmas 60%
• Refractive index 7%
• Thermodynamic stability 5%

Physics & Astronomy

• atomic layer epitaxy 67%
• cycles 7%
• damage 7%
• electric potential 5%
• passivity 15%