We investigate the interfacial reaction of Ni on Si1-xGe x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.
|Number of pages||4|
|Journal||Design and Nature|
|Publication status||Published - 2004 Nov 17|
|Event||Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece|
Duration: 2004 Jun 28 → 2004 Jun 30
ASJC Scopus subject areas