Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers

Y. W. Ok, S. H. Kim, Y. J. Song, K. H. Shim, Tae Yeon Seong

Research output: Contribution to journalArticle

Abstract

We investigate the interfacial reaction of Ni on Si1-xGe x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

Original languageEnglish
Pages (from-to)467-470
Number of pages4
JournalDesign and Nature
Volume6
Publication statusPublished - 2004 Nov 17
Externally publishedYes

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Surface chemistry
Epitaxial layers
Temperature
Energy dispersive spectroscopy
Annealing
Transmission electron microscopy
X ray diffraction

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers. / Ok, Y. W.; Kim, S. H.; Song, Y. J.; Shim, K. H.; Seong, Tae Yeon.

In: Design and Nature, Vol. 6, 17.11.2004, p. 467-470.

Research output: Contribution to journalArticle

Ok, Y. W. ; Kim, S. H. ; Song, Y. J. ; Shim, K. H. ; Seong, Tae Yeon. / Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers. In: Design and Nature. 2004 ; Vol. 6. pp. 467-470.
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