Investigation of interfacial reaction of Ni on epitaxial Si 1-xGex (001) layers

Y. W. Ok, S. H. Kim, Y. J. Song, K. H. Shim, T. Y. Seong

Research output: Contribution to journalConference article

Abstract

We investigate the interfacial reaction of Ni on Si1-xGe x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800°C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800°C. The Ni germanosilicide layers start to agglomerate at temperatures above 600°C and become discontinuous at 800°C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

Original languageEnglish
Pages (from-to)467-470
Number of pages4
JournalDesign and Nature
Volume6
Publication statusPublished - 2004
Externally publishedYes
EventDesign and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece
Duration: 2004 Jun 282004 Jun 30

ASJC Scopus subject areas

  • Engineering(all)

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