We investigate the interfacial reaction of Ni on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.
|Title of host publication||Microscopy of Semiconducting Materials 2003|
|Number of pages||4|
|ISBN (Print)||0750309792, 9781315895536|
|Publication status||Published - 2018 Jan 1|
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