Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers

Y. W. Ok, S. H. Kim, Y. J. Song, K. H. Shim, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We investigate the interfacial reaction of Ni on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Pages467-470
Number of pages4
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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    Ok, Y. W., Kim, S. H., Song, Y. J., Shim, K. H., & Seong, T. Y. (2018). Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers. In Microscopy of Semiconducting Materials 2003 (pp. 467-470). CRC Press. https://doi.org/10.1201/9781351074636