Investigation of Mn incorporation in fifteen-period InGaAs/GaAs quantum well system

Im Taek Yoon, Sejoon Lee, Yoon Shon, Younghae Kwon, Chang Soo Park, Cheol Jin Lee, Tae Won Kang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A ferromagnetic ordering with a Curie temperature of 50 K of fifteen layer of InGaMnAs/GaAs multi quantum wells (MQWs) structure grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE) was found. It is likely that the ferromagnetic exchange coupling of sample with Curie temperature of 50 K is hole-mediated resulting in Mn substituting In or Ga sites. Temperature and excitation power dependent PL emission spectra of InGaMnAs MQWs sample grown at temperature of 170 °C show that an activation energy of Mn ion on the first quantum confinement level in InGaAs quantum well is 36 meV and impurity Mn is partly ionized. It is found that the activation energy of 36 meV of Mn ion in the QW is lower than the activation energy of 110 meV for a substitutional Mn impurity in GaAs. These measurements provide strong evidence that an impurity band existing in the bandgap due to substitutional Mn ions and it is the location of the Fermi level within the impurity band that determines Curie temperature.

Original languageEnglish
Pages (from-to)1063-1066
Number of pages4
JournalCurrent Applied Physics
Volume14
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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