Investigation of simulated and measured program characteristics in 4-bit/cell charge-trap flash (CTF) memories

Jae Moo Kim, Yu Jeong Seo, Ho Myoung An, Tae Geun Kim, Sung Wook Park, Dae Hwan Kim

Research output: Contribution to journalArticle

Abstract

We investigate the simulated and measured program characteristics for 4-bit program operations in silicon-oxide-nitride-oxide-silicon (SONOS) devices by using two-dimensional (2-D) device simulations. For this calculation, the width of the region with charge trapped locally in the drain region is assumed to be as narrow as 44 nm to remove second-bit effects during the 2-bit and 4-bit operation. We determine the reverse read voltage for screening bit-1 to be 2.5 V and confirm that both 2-bit and 4-bit characteristics are successfully observed in our devices. From the threshold voltage shift, the densities of trapped charge are estimated to be 0 × 1019, 3 × 1019, 6 × 1019 and 9 × 1019 cm-3 at 4-level states, respectively. We also find that these simulation results are reasonably consistent with the experimental results achieved in this work.

Original languageEnglish
Pages (from-to)367-371
Number of pages5
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1

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flash
traps
cells
silicon oxides
threshold voltage
nitrides
screening
simulation
shift
electric potential

Keywords

  • 4-bit-per-cell
  • Localized trapped charge
  • NROM™
  • SONOS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Investigation of simulated and measured program characteristics in 4-bit/cell charge-trap flash (CTF) memories. / Kim, Jae Moo; Seo, Yu Jeong; An, Ho Myoung; Kim, Tae Geun; Park, Sung Wook; Kim, Dae Hwan.

In: Journal of the Korean Physical Society, Vol. 55, No. 1, 01.07.2009, p. 367-371.

Research output: Contribution to journalArticle

Kim, Jae Moo ; Seo, Yu Jeong ; An, Ho Myoung ; Kim, Tae Geun ; Park, Sung Wook ; Kim, Dae Hwan. / Investigation of simulated and measured program characteristics in 4-bit/cell charge-trap flash (CTF) memories. In: Journal of the Korean Physical Society. 2009 ; Vol. 55, No. 1. pp. 367-371.
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