Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping

Eun Ae Chung; Kab Jin Nam; Young Pil Kim; Ji Young Min; Moonju Cho; Hyungseok Hong; Jeong Han; Jae Duk Lee; Yu Gyun Shin; Siyoung Choi; Sangsig Kim

doi:10.1016/j.solidstatesciences.2011.03.010

Investigation of spatial and energetic trap distributions in 1 nm EOT SiO₂/HfO₂ by discharging-sweep mode amplitude charge pumping

Eun Ae Chung, Kab Jin Nam, Young Pil Kim, Ji Young Min, Moonju Cho, Hyungseok Hong, Jeong Han, Jae Duk Lee, Yu Gyun Shin, Siyoung Choi, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, the spatial and energetic distributions of electrons trapped within a SiO₂/HfO₂ dual layer gate stack (EOT = 1 nm) of fully processed high-k/metal gate nFETs were investigated by discharging-sweep mode amplitude charge pumping (DSACP). DSACP enables the separate energy profiling of the traps in the SiO₂ and HfO₂ layers of a SiO₂/HfO₂ gate stack. The electrical measurement of the spatial/energetic trap profiles with DSACP is based on the electron de-trapping mechanism, which allows scanning to be performed below the conduction band of Si in terms of both the depth and energy. The results show that shallower traps appear in the HfO₂ layer with increasing discharging time and a significant correlation exists between the density of the shallow traps and positive bias temperature instability (PBTI) characteristics.

Original language	English
Pages (from-to)	1360-1363
Number of pages	4
Journal	Solid State Sciences
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.solidstatesciences.2011.03.010
Publication status	Published - 2011 Jun

Keywords

Charge de-trapping
Charge pumping
High-k gate stack
MOSFET
Trap profile

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.solidstatesciences.2011.03.010

Cite this

@article{694bfe42175442e5af40711bc1842b24,

title = "Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping",

abstract = "In this study, the spatial and energetic distributions of electrons trapped within a SiO2/HfO2 dual layer gate stack (EOT = 1 nm) of fully processed high-k/metal gate nFETs were investigated by discharging-sweep mode amplitude charge pumping (DSACP). DSACP enables the separate energy profiling of the traps in the SiO2 and HfO2 layers of a SiO2/HfO2 gate stack. The electrical measurement of the spatial/energetic trap profiles with DSACP is based on the electron de-trapping mechanism, which allows scanning to be performed below the conduction band of Si in terms of both the depth and energy. The results show that shallower traps appear in the HfO2 layer with increasing discharging time and a significant correlation exists between the density of the shallow traps and positive bias temperature instability (PBTI) characteristics.",

keywords = "Charge de-trapping, Charge pumping, High-k gate stack, MOSFET, Trap profile",

author = "Chung, {Eun Ae} and Nam, {Kab Jin} and Kim, {Young Pil} and Min, {Ji Young} and Moonju Cho and Hyungseok Hong and Jeong Han and Lee, {Jae Duk} and Shin, {Yu Gyun} and Siyoung Choi and Sangsig Kim",

note = "Funding Information: The authors would like to thank Samsung Semiconductor Research Center for the financial support.",

year = "2011",

month = jun,

doi = "10.1016/j.solidstatesciences.2011.03.010",

language = "English",

volume = "13",

pages = "1360--1363",

journal = "Solid State Sciences",

issn = "1293-2558",

publisher = "Elsevier Masson SAS",

number = "6",

}

TY - JOUR

T1 - Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping

AU - Chung, Eun Ae

AU - Nam, Kab Jin

AU - Kim, Young Pil

AU - Min, Ji Young

AU - Cho, Moonju

AU - Hong, Hyungseok

AU - Han, Jeong

AU - Lee, Jae Duk

AU - Shin, Yu Gyun

AU - Choi, Siyoung

AU - Kim, Sangsig

N1 - Funding Information: The authors would like to thank Samsung Semiconductor Research Center for the financial support.

PY - 2011/6

Y1 - 2011/6

N2 - In this study, the spatial and energetic distributions of electrons trapped within a SiO2/HfO2 dual layer gate stack (EOT = 1 nm) of fully processed high-k/metal gate nFETs were investigated by discharging-sweep mode amplitude charge pumping (DSACP). DSACP enables the separate energy profiling of the traps in the SiO2 and HfO2 layers of a SiO2/HfO2 gate stack. The electrical measurement of the spatial/energetic trap profiles with DSACP is based on the electron de-trapping mechanism, which allows scanning to be performed below the conduction band of Si in terms of both the depth and energy. The results show that shallower traps appear in the HfO2 layer with increasing discharging time and a significant correlation exists between the density of the shallow traps and positive bias temperature instability (PBTI) characteristics.

AB - In this study, the spatial and energetic distributions of electrons trapped within a SiO2/HfO2 dual layer gate stack (EOT = 1 nm) of fully processed high-k/metal gate nFETs were investigated by discharging-sweep mode amplitude charge pumping (DSACP). DSACP enables the separate energy profiling of the traps in the SiO2 and HfO2 layers of a SiO2/HfO2 gate stack. The electrical measurement of the spatial/energetic trap profiles with DSACP is based on the electron de-trapping mechanism, which allows scanning to be performed below the conduction band of Si in terms of both the depth and energy. The results show that shallower traps appear in the HfO2 layer with increasing discharging time and a significant correlation exists between the density of the shallow traps and positive bias temperature instability (PBTI) characteristics.

KW - Charge de-trapping

KW - Charge pumping

KW - High-k gate stack

KW - MOSFET

KW - Trap profile

UR - http://www.scopus.com/inward/record.url?scp=79957573905&partnerID=8YFLogxK

U2 - 10.1016/j.solidstatesciences.2011.03.010

DO - 10.1016/j.solidstatesciences.2011.03.010

M3 - Article

AN - SCOPUS:79957573905

SN - 1293-2558

VL - 13

SP - 1360

EP - 1363

JO - Solid State Sciences

JF - Solid State Sciences

IS - 6

ER -