Investigation of structural defects in CdZnTe detector-grade crystals

A. Hossain, A. E. Bolotnikov, G. S. Camarda, R. Gul, Kihyun Kim, K. Kisslinger, G. Yang, L. H. Zhang, R. B. James

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.

Original languageEnglish
Pages (from-to)2908-2911
Number of pages4
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes

Keywords

  • CdZnTe
  • Dislocations
  • Radiation detectors
  • Stacking faults
  • Te precipitate
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Hossain, A., Bolotnikov, A. E., Camarda, G. S., Gul, R., Kim, K., Kisslinger, K., Yang, G., Zhang, L. H., & James, R. B. (2012). Investigation of structural defects in CdZnTe detector-grade crystals. Journal of Electronic Materials, 41(10), 2908-2911. https://doi.org/10.1007/s11664-012-2007-8