Investigation of structural defects in CdZnTe detector-grade crystals

A. Hossain; A. E. Bolotnikov; G. S. Camarda; R. Gul; K. H. Kim; K. Kisslinger; G. Yang; L. H. Zhang; R. B. James

doi:10.1007/s11664-012-2007-8

Investigation of structural defects in CdZnTe detector-grade crystals

A. Hossain, A. E. Bolotnikov, G. S. Camarda, R. Gul, K. H. Kim, K. Kisslinger, G. Yang, L. H. Zhang, R. B. James

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.

Original language	English
Pages (from-to)	2908-2911
Number of pages	4
Journal	Journal of Electronic Materials
Volume	41
Issue number	10
DOIs	https://doi.org/10.1007/s11664-012-2007-8
Publication status	Published - 2012 Oct
Externally published	Yes

Keywords

CdZnTe
Dislocations
Radiation detectors
Stacking faults
TEM
Te precipitate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-012-2007-8

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title = "Investigation of structural defects in CdZnTe detector-grade crystals",

abstract = "We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.",

keywords = "CdZnTe, Dislocations, Radiation detectors, Stacking faults, TEM, Te precipitate",

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T1 - Investigation of structural defects in CdZnTe detector-grade crystals

AU - Hossain, A.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Gul, R.

AU - Kim, K. H.

AU - Kisslinger, K.

AU - Yang, G.

AU - Zhang, L. H.

AU - James, R. B.

PY - 2012/10

Y1 - 2012/10

N2 - We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.

AB - We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.

KW - CdZnTe

KW - Dislocations

KW - Radiation detectors

KW - Stacking faults

KW - TEM

KW - Te precipitate

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DO - 10.1007/s11664-012-2007-8

M3 - Article

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

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ER -

Investigation of structural defects in CdZnTe detector-grade crystals

Abstract

Keywords

ASJC Scopus subject areas

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