Abstract
We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 2908-2911 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 41 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 Oct 1 |
| Externally published | Yes |
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Keywords
- CdZnTe
- Dislocations
- Radiation detectors
- Stacking faults
- Te precipitate
- TEM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Investigation of structural defects in CdZnTe detector-grade crystals. / Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Gul, R.; Kim, Kihyun; Kisslinger, K.; Yang, G.; Zhang, L. H.; James, R. B.
In: Journal of Electronic Materials, Vol. 41, No. 10, 01.10.2012, p. 2908-2911.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of structural defects in CdZnTe detector-grade crystals
AU - Hossain, A.
AU - Bolotnikov, A. E.
AU - Camarda, G. S.
AU - Gul, R.
AU - Kim, Kihyun
AU - Kisslinger, K.
AU - Yang, G.
AU - Zhang, L. H.
AU - James, R. B.
PY - 2012/10/1
Y1 - 2012/10/1
N2 - We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.
AB - We investigated structural defects in CdZnTe detector-grade crystals grown under different conditions. Here, we report our findings from high-resolution electron microscopy [transmission electron microscopy (TEM) and scanning TEM (STEM)] and scanning electron microscopy integrated with energy-dispersive x-ray spectroscopy to characterize the material's structural and chemical composition. Combining these techniques gave us important information about the defects, their concentration, and the elemental composition of the CdZnTe crystals. Our experimental observations demonstrated some distinct nanostructural defects in the crystals that may play a major role in device performance.
KW - CdZnTe
KW - Dislocations
KW - Radiation detectors
KW - Stacking faults
KW - Te precipitate
KW - TEM
UR - http://www.scopus.com/inward/record.url?scp=84868545098&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84868545098&partnerID=8YFLogxK
U2 - 10.1007/s11664-012-2007-8
DO - 10.1007/s11664-012-2007-8
M3 - Article
AN - SCOPUS:84868545098
VL - 41
SP - 2908
EP - 2911
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 10
ER -