Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, Jong Heun Lee, J. H. Gu, N. I. Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

Original languageEnglish
JournalSurface Science
Volume554
Issue number1
DOIs
Publication statusPublished - 2004 Apr 1
Externally publishedYes

Fingerprint

Annealing
annealing
Silicates
Temperature
silicates
Vacuum
vacuum
Core levels
Atomic layer deposition
Ultrahigh vacuum
atomic layer epitaxy
Binding energy
Thick films
Electron energy levels
ultrahigh vacuum
thick films
Thermodynamic stability
thermal stability
X ray photoelectron spectroscopy
binding energy

Keywords

  • Photoelectron spectroscopy
  • Semiconductor-insulator interfaces

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Cho, M. H., Chang, H. S., Cho, Y. J., Moon, D. W., Min, K. H., Sinclair, R., ... Lee, N. I. (2004). Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing. Surface Science, 554(1). https://doi.org/10.1016/j.susc.2004.01.058

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing. / Cho, M. H.; Chang, H. S.; Cho, Y. J.; Moon, D. W.; Min, K. H.; Sinclair, R.; Kang, S. K.; Ko, D. H.; Lee, Jong Heun; Gu, J. H.; Lee, N. I.

In: Surface Science, Vol. 554, No. 1, 01.04.2004.

Research output: Contribution to journalArticle

Cho, MH, Chang, HS, Cho, YJ, Moon, DW, Min, KH, Sinclair, R, Kang, SK, Ko, DH, Lee, JH, Gu, JH & Lee, NI 2004, 'Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing', Surface Science, vol. 554, no. 1. https://doi.org/10.1016/j.susc.2004.01.058
Cho, M. H. ; Chang, H. S. ; Cho, Y. J. ; Moon, D. W. ; Min, K. H. ; Sinclair, R. ; Kang, S. K. ; Ko, D. H. ; Lee, Jong Heun ; Gu, J. H. ; Lee, N. I. / Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing. In: Surface Science. 2004 ; Vol. 554, No. 1.
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