Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, J. H. Lee, J. H. Gu, N. I. Lee

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19 Citations (Scopus)


Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

Original languageEnglish
Pages (from-to)L75-L80
JournalSurface Science
Issue number1
Publication statusPublished - 2004 Apr 1
Externally publishedYes


  • Photoelectron spectroscopy
  • Semiconductor-insulator interfaces

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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