Investigation of vertically trapped charge locations in Cr-doped-SrTiO 3-based charge trapping memory devices

Yujeong Seo, Min Yeong Song, Ho Myoung An, Yeon Soo Kim, Bae Ho Park, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, vertically trapped charge location is investigated to understand the carrier-transport dynamics in chromium-doped strontium titanate (Cr-SrTiO 3 (STO))-based charge trapping memory devices using a transient analysis method. The vertical location of trapped charges is found to move from the Cr-SrTiO 3/Si 3N 4 interface to the bulk region of Si 3N 4 with an increasing of the electric field, and, particularly, available trap sites are limited at the Cr-SrTiO 3/Si 3N 4 interface by hole injection from the Si substrate into the Si 3N 4 layer at a high electric field (E OX > 7 MV/cm). In addition, some of these charges passing across the SiO 2 (OX) layer generate many Si-SiO 2 interface traps (D it: 1.58 × 10 12 cm -2 eV -1) that may degrade the device. However, the trapping efficiency can be improved by using sufficiently thick ( > 10 nm) bottom layers and by preventing direct hole tunneling and thereby, reducing the interface trap density.

Original languageEnglish
Article number074505
JournalJournal of Applied Physics
Volume112
Issue number7
DOIs
Publication statusPublished - 2012 Oct 1

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trapping
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  • Physics and Astronomy(all)

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Investigation of vertically trapped charge locations in Cr-doped-SrTiO 3-based charge trapping memory devices. / Seo, Yujeong; Song, Min Yeong; An, Ho Myoung; Kim, Yeon Soo; Park, Bae Ho; Kim, Tae Geun.

In: Journal of Applied Physics, Vol. 112, No. 7, 074505, 01.10.2012.

Research output: Contribution to journalArticle

Seo, Yujeong ; Song, Min Yeong ; An, Ho Myoung ; Kim, Yeon Soo ; Park, Bae Ho ; Kim, Tae Geun. / Investigation of vertically trapped charge locations in Cr-doped-SrTiO 3-based charge trapping memory devices. In: Journal of Applied Physics. 2012 ; Vol. 112, No. 7.
@article{945e4ae3e9364a7184bcc61195ee53fb,
title = "Investigation of vertically trapped charge locations in Cr-doped-SrTiO 3-based charge trapping memory devices",
abstract = "In this paper, vertically trapped charge location is investigated to understand the carrier-transport dynamics in chromium-doped strontium titanate (Cr-SrTiO 3 (STO))-based charge trapping memory devices using a transient analysis method. The vertical location of trapped charges is found to move from the Cr-SrTiO 3/Si 3N 4 interface to the bulk region of Si 3N 4 with an increasing of the electric field, and, particularly, available trap sites are limited at the Cr-SrTiO 3/Si 3N 4 interface by hole injection from the Si substrate into the Si 3N 4 layer at a high electric field (E OX > 7 MV/cm). In addition, some of these charges passing across the SiO 2 (OX) layer generate many Si-SiO 2 interface traps (D it: 1.58 × 10 12 cm -2 eV -1) that may degrade the device. However, the trapping efficiency can be improved by using sufficiently thick ( > 10 nm) bottom layers and by preventing direct hole tunneling and thereby, reducing the interface trap density.",
author = "Yujeong Seo and Song, {Min Yeong} and An, {Ho Myoung} and Kim, {Yeon Soo} and Park, {Bae Ho} and Kim, {Tae Geun}",
year = "2012",
month = "10",
day = "1",
doi = "10.1063/1.4757413",
language = "English",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Investigation of vertically trapped charge locations in Cr-doped-SrTiO 3-based charge trapping memory devices

AU - Seo, Yujeong

AU - Song, Min Yeong

AU - An, Ho Myoung

AU - Kim, Yeon Soo

AU - Park, Bae Ho

AU - Kim, Tae Geun

PY - 2012/10/1

Y1 - 2012/10/1

N2 - In this paper, vertically trapped charge location is investigated to understand the carrier-transport dynamics in chromium-doped strontium titanate (Cr-SrTiO 3 (STO))-based charge trapping memory devices using a transient analysis method. The vertical location of trapped charges is found to move from the Cr-SrTiO 3/Si 3N 4 interface to the bulk region of Si 3N 4 with an increasing of the electric field, and, particularly, available trap sites are limited at the Cr-SrTiO 3/Si 3N 4 interface by hole injection from the Si substrate into the Si 3N 4 layer at a high electric field (E OX > 7 MV/cm). In addition, some of these charges passing across the SiO 2 (OX) layer generate many Si-SiO 2 interface traps (D it: 1.58 × 10 12 cm -2 eV -1) that may degrade the device. However, the trapping efficiency can be improved by using sufficiently thick ( > 10 nm) bottom layers and by preventing direct hole tunneling and thereby, reducing the interface trap density.

AB - In this paper, vertically trapped charge location is investigated to understand the carrier-transport dynamics in chromium-doped strontium titanate (Cr-SrTiO 3 (STO))-based charge trapping memory devices using a transient analysis method. The vertical location of trapped charges is found to move from the Cr-SrTiO 3/Si 3N 4 interface to the bulk region of Si 3N 4 with an increasing of the electric field, and, particularly, available trap sites are limited at the Cr-SrTiO 3/Si 3N 4 interface by hole injection from the Si substrate into the Si 3N 4 layer at a high electric field (E OX > 7 MV/cm). In addition, some of these charges passing across the SiO 2 (OX) layer generate many Si-SiO 2 interface traps (D it: 1.58 × 10 12 cm -2 eV -1) that may degrade the device. However, the trapping efficiency can be improved by using sufficiently thick ( > 10 nm) bottom layers and by preventing direct hole tunneling and thereby, reducing the interface trap density.

UR - http://www.scopus.com/inward/record.url?scp=84867504513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867504513&partnerID=8YFLogxK

U2 - 10.1063/1.4757413

DO - 10.1063/1.4757413

M3 - Article

AN - SCOPUS:84867504513

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 074505

ER -