Investigation of water splitting using III-N structures

Alexander Usikov, Ivan Ermakov, Heikki Helava, Sergey Kurin, Alexey Nikiforov, Boris Papchenko, Mike Puzyk, Alexander Polyakov, In-Hwan Lee, Yuri Makarov

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Specifics of the water photoelectrolysis in KOH-base aqueous solution using GaN-based structures as working electrodes are studied. The structures were grown by HVPE and MOCVD techniques on sapphire substrates. In highly Si-doped HVPE-grown GaN layers (ND−NA ∼ 3 × 1018 cm−3) a barrier at the E1 offset potential dominates the current–potential (I–E) characteristics. The same dominant E1 offset potential was observed in MOCVD-grown GaN/InGaN nanopillar structures after the treatment. The Debye screening effect in high-concentration of KOH electrolyte (20–40 wt.%) that reduces the potential barrier was observed clearly in the defectless nanopillar structures. The corrosion process is initiated in the top p-type layers via channels associated with threading defects and can penetrate deeply into the structure. It further proceeds in a lateral direction in n-type layers forming voids and cavities in the structure. The H2 production rate of 0.3–0.6 ml cm−2 h−1 was measured for n-GaN-based structure in KOH electrolyte under the Xe-lamp illumination (concentration factor ×15).

Original languageEnglish
Article number1600744
JournalPhysica Status Solidi (B) Basic Research
Volume254
Issue number8
DOIs
Publication statusPublished - 2017 Aug 1
Externally publishedYes

Keywords

  • electrochemistry
  • hydride vapor phase epitaxy
  • III-nitride semiconductors
  • photoelectrolysis
  • water splitting

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Usikov, A., Ermakov, I., Helava, H., Kurin, S., Nikiforov, A., Papchenko, B., Puzyk, M., Polyakov, A., Lee, I-H., & Makarov, Y. (2017). Investigation of water splitting using III-N structures. Physica Status Solidi (B) Basic Research, 254(8), [1600744]. https://doi.org/10.1002/pssb.201600744