Investigation of water splitting using III-N structures

Alexander Usikov, Ivan Ermakov, Heikki Helava, Sergey Kurin, Alexey Nikiforov, Boris Papchenko, Mike Puzyk, Alexander Polyakov, In-Hwan Lee, Yuri Makarov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Specifics of the water photoelectrolysis in KOH-base aqueous solution using GaN-based structures as working electrodes are studied. The structures were grown by HVPE and MOCVD techniques on sapphire substrates. In highly Si-doped HVPE-grown GaN layers (ND−NA ∼ 3 × 1018 cm−3) a barrier at the E1 offset potential dominates the current–potential (I–E) characteristics. The same dominant E1 offset potential was observed in MOCVD-grown GaN/InGaN nanopillar structures after the treatment. The Debye screening effect in high-concentration of KOH electrolyte (20–40 wt.%) that reduces the potential barrier was observed clearly in the defectless nanopillar structures. The corrosion process is initiated in the top p-type layers via channels associated with threading defects and can penetrate deeply into the structure. It further proceeds in a lateral direction in n-type layers forming voids and cavities in the structure. The H2 production rate of 0.3–0.6 ml cm−2 h−1 was measured for n-GaN-based structure in KOH electrolyte under the Xe-lamp illumination (concentration factor ×15).

Original languageEnglish
Article number1600744
JournalPhysica Status Solidi (B) Basic Research
Volume254
Issue number8
DOIs
Publication statusPublished - 2017 Aug 1
Externally publishedYes

Fingerprint

water splitting
Metallorganic chemical vapor deposition
Electrolytes
metalorganic chemical vapor deposition
Water
Aluminum Oxide
Electric lamps
Sapphire
electrolytes
Screening
Lighting
Corrosion
Defects
Electrodes
luminaires
voids
corrosion
sapphire
Substrates
screening

Keywords

  • electrochemistry
  • hydride vapor phase epitaxy
  • III-nitride semiconductors
  • photoelectrolysis
  • water splitting

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Usikov, A., Ermakov, I., Helava, H., Kurin, S., Nikiforov, A., Papchenko, B., ... Makarov, Y. (2017). Investigation of water splitting using III-N structures. Physica Status Solidi (B) Basic Research, 254(8), [1600744]. https://doi.org/10.1002/pssb.201600744

Investigation of water splitting using III-N structures. / Usikov, Alexander; Ermakov, Ivan; Helava, Heikki; Kurin, Sergey; Nikiforov, Alexey; Papchenko, Boris; Puzyk, Mike; Polyakov, Alexander; Lee, In-Hwan; Makarov, Yuri.

In: Physica Status Solidi (B) Basic Research, Vol. 254, No. 8, 1600744, 01.08.2017.

Research output: Contribution to journalArticle

Usikov, A, Ermakov, I, Helava, H, Kurin, S, Nikiforov, A, Papchenko, B, Puzyk, M, Polyakov, A, Lee, I-H & Makarov, Y 2017, 'Investigation of water splitting using III-N structures', Physica Status Solidi (B) Basic Research, vol. 254, no. 8, 1600744. https://doi.org/10.1002/pssb.201600744
Usikov A, Ermakov I, Helava H, Kurin S, Nikiforov A, Papchenko B et al. Investigation of water splitting using III-N structures. Physica Status Solidi (B) Basic Research. 2017 Aug 1;254(8). 1600744. https://doi.org/10.1002/pssb.201600744
Usikov, Alexander ; Ermakov, Ivan ; Helava, Heikki ; Kurin, Sergey ; Nikiforov, Alexey ; Papchenko, Boris ; Puzyk, Mike ; Polyakov, Alexander ; Lee, In-Hwan ; Makarov, Yuri. / Investigation of water splitting using III-N structures. In: Physica Status Solidi (B) Basic Research. 2017 ; Vol. 254, No. 8.
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