Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

Young Chul Shin, Bum Jun Kim, Dong Hoon Kang, Young Min Kim, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The behaviour of Zn diffusion in a GaInP/(Al0.5Ga 0.5)0.5In0.5P multiple quantum-well (MQW) layer was investigated as a function of the growth temperature and Zn/III ratio by secondary ion mass spectroscopy (SIMS). Then the diffusion length of Zn in the undoped (Al0.7Ga0.3)0.5In0.5P layer from the Zn-doped (Al0.7Ga0.3)0.5In 0.5P (Zn: 1.0-1.2 × 1018 cm-3) cladding layer was evaluated to design a barrier layer for Zn diffusion into the GaInP/(Al0.5Ga0.5)0.5In0.5P MQW active layer. As a result of incorporating a 130 nm thick diffusion barrier on top of the MQW layers of the AlGaInP red laser, the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum for the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers was reduced from 60 meV to 30 meV at room temperature (RT), and the threshold current was also greatly reduced from 110 mA to 75 mA for a standard AlGaInP-based ridge laser as compared to a AlGaInP laser without a diffusion barrier.

Original languageEnglish
Pages (from-to)35-39
Number of pages5
JournalSemiconductor Science and Technology
Volume21
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

Fingerprint

Semiconductor quantum wells
mass spectroscopy
Spectroscopy
Ions
Diffusion barriers
Lasers
quantum wells
lasers
ions
Growth temperature
Full width at half maximum
Photoluminescence
barrier layers
diffusion length
threshold currents
ridges
photoluminescence
room temperature
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers. / Shin, Young Chul; Kim, Bum Jun; Kang, Dong Hoon; Kim, Young Min; Kim, Tae Geun.

In: Semiconductor Science and Technology, Vol. 21, No. 1, 01.01.2006, p. 35-39.

Research output: Contribution to journalArticle

Shin, Young Chul ; Kim, Bum Jun ; Kang, Dong Hoon ; Kim, Young Min ; Kim, Tae Geun. / Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 1. pp. 35-39.
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