Investigation on growth behavior of multiphase silicon carbon film for front contact layer in a Si thin film solar cell

Sun Ho Kim, Dong Joo You, Sun Tae Hwang, Haeseok Lee, Sungeun Lee, Heon Min Lee, Donghwan Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Boron doped hydrogenated multiphase silicon-carbon (multiphase silicon-carbon) film has been grown by a plasma enhanced chemical vapour deposition (PECVD) method to obtain the properties of high conductivity and a low absorption coefficient. It consists of amorphous carbon, amorphous silicon and a crystalline silicon-like clustering phase. It has the advantage of reducing optical loss due to the wider band gap of amorphous carbon compared to amorphous silicon carbide. The film was fabricated in conditions of low power density with a high hydrogen flow rate to increase the ratio of the amorphous carbon. This result is able to be achieved because the reaction of Si-based and C-based radicals is suppressed by the deposition condition of low electron temperature (Te) of the plasma and the short residence time of the gases. The multiphase silicon-carbon showed high electrical conductivity and a low optical absorption coefficient in the short wavelength region. Applying it for use as a front contact layer in a Si thin film solar cell, it showed an improvement in the conversion efficiency due to the increase in the quantum efficiency in the short wavelength region.

Original languageEnglish
Pages (from-to)98-103
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume127
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Carbon films
Silicon
Amorphous carbon
Amorphous silicon
Carbon
Wavelength
Optical losses
Boron
Electron temperature
Plasma enhanced chemical vapor deposition
Quantum efficiency
Silicon carbide
Light absorption
Conversion efficiency
Hydrogen
Energy gap
Gases
Flow rate
Crystalline materials
Plasmas

Keywords

  • Contact layer
  • Multiphase silicon-carbon
  • PECVD
  • Si thin film solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Investigation on growth behavior of multiphase silicon carbon film for front contact layer in a Si thin film solar cell. / Kim, Sun Ho; You, Dong Joo; Hwang, Sun Tae; Lee, Haeseok; Lee, Sungeun; Lee, Heon Min; Kim, Donghwan.

In: Solar Energy Materials and Solar Cells, Vol. 127, 01.01.2014, p. 98-103.

Research output: Contribution to journalArticle

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AU - Kim, Sun Ho

AU - You, Dong Joo

AU - Hwang, Sun Tae

AU - Lee, Haeseok

AU - Lee, Sungeun

AU - Lee, Heon Min

AU - Kim, Donghwan

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AB - Boron doped hydrogenated multiphase silicon-carbon (multiphase silicon-carbon) film has been grown by a plasma enhanced chemical vapour deposition (PECVD) method to obtain the properties of high conductivity and a low absorption coefficient. It consists of amorphous carbon, amorphous silicon and a crystalline silicon-like clustering phase. It has the advantage of reducing optical loss due to the wider band gap of amorphous carbon compared to amorphous silicon carbide. The film was fabricated in conditions of low power density with a high hydrogen flow rate to increase the ratio of the amorphous carbon. This result is able to be achieved because the reaction of Si-based and C-based radicals is suppressed by the deposition condition of low electron temperature (Te) of the plasma and the short residence time of the gases. The multiphase silicon-carbon showed high electrical conductivity and a low optical absorption coefficient in the short wavelength region. Applying it for use as a front contact layer in a Si thin film solar cell, it showed an improvement in the conversion efficiency due to the increase in the quantum efficiency in the short wavelength region.

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