Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires

Kwangeun Kim, Taeho Moon, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V.The electroluminescence spectrum in the dark showed the strong emission at ∼385 nm and the broad emission centered at ∼510 nm, at a forward bias of 30 V. Under the illumination of 325 -nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence.

Original languageEnglish
Pages (from-to)6025-6028
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number7
DOIs
Publication statusPublished - 2011 Jul

Keywords

  • Light-Emitting Diode
  • Nanowire
  • Si
  • ZnO

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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