Investigation on the electric properties of Bi1.5 ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors

Kyoung Pyo Hong, Kyung Hoon Cho, Young Hun Jeong, Sahm Nahm, Chong Yun Kang, Seok Jin Yoon

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


A small crystalline phase was formed in the Bi1.5 ZnNb1.5O7 (BZN) film grown at 300 °C TiN/ SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/ μ2 at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm2, at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V2 and 149 ppm/°C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 °C can be a good candidate material for metal-insulator-metal capacitors.

Original languageEnglish
Pages (from-to)334-337
Number of pages4
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2008 Apr


  • BiZnNbO
  • High-k
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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