A small crystalline phase was formed in the Bi1.5 ZnNb1.5O7 (BZN) film grown at 300 °C TiN/ SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/ μ2 at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm2, at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V2 and 149 ppm/°C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 °C can be a good candidate material for metal-insulator-metal capacitors.
- Metal-insulator-metal (MIM) capacitor
- Temperature coefficient of capacitance (TCC)
- Voltage coefficient of capacitance (VCC)
ASJC Scopus subject areas
- Electrical and Electronic Engineering