Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors

Byeong Hyeon Lee, Doo Yong Lee, Ji Ye Lee, Sungkyun Park, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nitrogen-doped silicon indium zinc oxide (N-SIZO) thin film transistor (TFTs) were fabricated depending on nitrogen contents. It has been observed that nitrogen has substituted oxygen in N-SIZO system. Its electrical property and bias stability can be appropriately tuned by nitrogen-doping to reduce oxygen defect states. This change is mainly caused by the substitution of O atoms by N ones. As the N content increased, the peak related to the oxygen deficiency of XPS was systematically decreased. In addition, TLM analysis confirmed that the resistance increases steadily with increasing N content. Subthreshold swing (SS) was also improved by increasing nitrogen doping. This low SS means that the total trap state is decreased. As a result, it is confirmed that the negative bias stress (NBS) test shows stability as the N content increases.

Original languageEnglish
Pages (from-to)59-63
Number of pages5
JournalSolid-State Electronics
Volume158
DOIs
Publication statusPublished - 2019 Aug 1

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Keywords

  • Amorphous oxide semiconductor
  • Nitrogen doping
  • SiInZnO
  • Thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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