The thermal behavior of antifusing device characteristic with SiO2/Ti0.1 W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600°C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry