Investigation on the ion-gel dielectric characteristics for graphene transistor toward flexible and transparent devices

Taegeun Kim, Un Jeong Kim, Hyung Bin Son, Jaehyun Hur

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We systematically investigated the effect of chemical property of ion-gel on the graphene FET performances in terms of on/off ratio, Dirac point voltage, and transconductace. The chemical property of ion-gel was controlled by the various UV-crosslinking conditions for ion gel formation. Our experiments revealed that UV exposure time and composition ratio for the ion-gel dielectric play important roles in modulating graphene FET characteristics. At an optimized condition, our device showed not only very high on/off ratio (~20), but low operable gate-source voltage range (< 2 V). Besides, by taking advantages of elastic and transparent properties of our ion-gel, we demonstrated the fabrication of flexible and transparent ion-gel top-gated graphene FET on plastic substrate with high performances.

Original languageEnglish
Pages (from-to)1589-1594
Number of pages6
JournalScience of Advanced Materials
Volume9
Issue number9
DOIs
Publication statusPublished - 2017 Sep 1
Externally publishedYes

Keywords

  • Flexible
  • Graphene
  • Ion-gel
  • Transistors
  • Transparent

ASJC Scopus subject areas

  • Materials Science(all)

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