Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

Jihoon Choi, Hyun Seok Lee, Taek Sung Lee, Suyoun Lee, Won Mok Kim, Donghwan Kim, Byung Ki Cheong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70 Te30 as host materials of N. Crystallization of the as-sputtered Sb-N films of varying N content was examined to reveal that Sb-N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N2 molecules that may then exist stably during the subsequent memory operations. N2 molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70 Te30.

Original languageEnglish
Article number081905
JournalApplied Physics Letters
Volume95
Issue number8
DOIs
Publication statusPublished - 2009 Sep 7

Fingerprint

phase change materials
crystallization
nitrogen
molecules
retarding
dissociation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials. / Choi, Jihoon; Lee, Hyun Seok; Lee, Taek Sung; Lee, Suyoun; Kim, Won Mok; Kim, Donghwan; Cheong, Byung Ki.

In: Applied Physics Letters, Vol. 95, No. 8, 081905, 07.09.2009.

Research output: Contribution to journalArticle

Choi, Jihoon ; Lee, Hyun Seok ; Lee, Taek Sung ; Lee, Suyoun ; Kim, Won Mok ; Kim, Donghwan ; Cheong, Byung Ki. / Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials. In: Applied Physics Letters. 2009 ; Vol. 95, No. 8.
@article{e1d6513f6f374a47b12766afc2ddcb3a,
title = "Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials",
abstract = "To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70 Te30 as host materials of N. Crystallization of the as-sputtered Sb-N films of varying N content was examined to reveal that Sb-N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N2 molecules that may then exist stably during the subsequent memory operations. N2 molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70 Te30.",
author = "Jihoon Choi and Lee, {Hyun Seok} and Lee, {Taek Sung} and Suyoun Lee and Kim, {Won Mok} and Donghwan Kim and Cheong, {Byung Ki}",
year = "2009",
month = "9",
day = "7",
doi = "10.1063/1.3211871",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

AU - Choi, Jihoon

AU - Lee, Hyun Seok

AU - Lee, Taek Sung

AU - Lee, Suyoun

AU - Kim, Won Mok

AU - Kim, Donghwan

AU - Cheong, Byung Ki

PY - 2009/9/7

Y1 - 2009/9/7

N2 - To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70 Te30 as host materials of N. Crystallization of the as-sputtered Sb-N films of varying N content was examined to reveal that Sb-N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N2 molecules that may then exist stably during the subsequent memory operations. N2 molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70 Te30.

AB - To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70 Te30 as host materials of N. Crystallization of the as-sputtered Sb-N films of varying N content was examined to reveal that Sb-N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N2 molecules that may then exist stably during the subsequent memory operations. N2 molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70 Te30.

UR - http://www.scopus.com/inward/record.url?scp=69549110244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69549110244&partnerID=8YFLogxK

U2 - 10.1063/1.3211871

DO - 10.1063/1.3211871

M3 - Article

AN - SCOPUS:69549110244

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 081905

ER -