Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

Jun Young Choi, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

Original languageEnglish
Pages (from-to)7089-7091
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number10
DOIs
Publication statusPublished - 2013 Oct 1

Fingerprint

Silicon
Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
Oxides
tin oxides
Oxide films
Zinc Oxide
transistors
silicon transistors
temperature dependence
Temperature
oxides
silicon
thin films
Silicon wafers
Threshold voltage
threshold voltage
wafers

Keywords

  • Oxide Thin Film Transistors
  • SiZnSnO
  • Solution Process

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor. / Choi, Jun Young; Kim, Sangsig; Lee, Sang Yeol.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 10, 01.10.2013, p. 7089-7091.

Research output: Contribution to journalArticle

@article{4cd10585449847d182c3ddbd56a6a3f2,
title = "Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor",
abstract = "The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.",
keywords = "Oxide Thin Film Transistors, SiZnSnO, Solution Process",
author = "Choi, {Jun Young} and Sangsig Kim and Lee, {Sang Yeol}",
year = "2013",
month = "10",
day = "1",
doi = "10.1166/jnn.2013.7632",
language = "English",
volume = "13",
pages = "7089--7091",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "10",

}

TY - JOUR

T1 - Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

AU - Choi, Jun Young

AU - Kim, Sangsig

AU - Lee, Sang Yeol

PY - 2013/10/1

Y1 - 2013/10/1

N2 - The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

AB - The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

KW - Oxide Thin Film Transistors

KW - SiZnSnO

KW - Solution Process

UR - http://www.scopus.com/inward/record.url?scp=84889070246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889070246&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.7632

DO - 10.1166/jnn.2013.7632

M3 - Article

AN - SCOPUS:84889070246

VL - 13

SP - 7089

EP - 7091

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 10

ER -