Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

Original languageEnglish
Pages (from-to)7089-7091
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number10
DOIs
Publication statusPublished - 2013 Oct

Keywords

  • Oxide Thin Film Transistors
  • SiZnSnO
  • Solution Process

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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