Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

Byeong Hyeon Lee, Sae Young Hong, Dae Hwan Kim, Sangsig Kim, Hyuck In Kwon, Sang Yeol Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.

Original languageEnglish
Article number311629
JournalPhysica B: Condensed Matter
Volume574
DOIs
Publication statusPublished - 2019 Dec 1

Keywords

  • Amorphous oxide semiconductor
  • Low-frequency noise
  • Silicon zinc tin oxide
  • Thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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