We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.
|Number of pages||8|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1992 Nov 1|
ASJC Scopus subject areas
- Condensed Matter Physics