Investigations on the influence of masks on the nature of selective area epitaxy

J. Thompson, A. K. Wood, N. Carr, P. M. Charles, A. J. Moseley, R. Pritchard, B. Hamilton, A. Chew, D. E. Sykes, T. Y. Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.

Original languageEnglish
Pages (from-to)227-234
Number of pages8
JournalJournal of Crystal Growth
Volume124
Issue number1-4
DOIs
Publication statusPublished - 1992 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Thompson, J., Wood, A. K., Carr, N., Charles, P. M., Moseley, A. J., Pritchard, R., Hamilton, B., Chew, A., Sykes, D. E., & Seong, T. Y. (1992). Investigations on the influence of masks on the nature of selective area epitaxy. Journal of Crystal Growth, 124(1-4), 227-234. https://doi.org/10.1016/0022-0248(92)90464-T