TY - JOUR
T1 - Ion-assisted doping of CdTe
AU - Fahrenbruch, A. L.
AU - Chien, K. F.
AU - Kim, D.
AU - Lopez-Otero, A.
AU - Sharps, P.
AU - Rube, R. H.
N1 - Funding Information:
The authors appreciate the support for this work from SERI, under the University Participation Program. P.S. is supported by an AT&T Bell Labs fellowship.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1989
Y1 - 1989
N2 - The possibility of using ion-assisted doping during growth of p-CdTe films for solar cells has been investigated, to obtain higher doping densities than previously obtained wtih conventional film deposition processes. For the first time, controlled doping has been demonstrated with low-energy phosphorus ions to obtain hole densities of up to 2 × 1017 cm-3 in homo-epitaxial films deposited by vacuum evaporation on single-crystal CdTe. Solar cells made with these films suggest that ion damage reduces the diffusion length in the most highly doped films and that the active region of such cells must be made with considerably lower doping densities. For polycrystalline films on alumina, preliminary results indicate that the hole densities obtained are not sufficient to overcome grain boundary barrier limited conductivity.
AB - The possibility of using ion-assisted doping during growth of p-CdTe films for solar cells has been investigated, to obtain higher doping densities than previously obtained wtih conventional film deposition processes. For the first time, controlled doping has been demonstrated with low-energy phosphorus ions to obtain hole densities of up to 2 × 1017 cm-3 in homo-epitaxial films deposited by vacuum evaporation on single-crystal CdTe. Solar cells made with these films suggest that ion damage reduces the diffusion length in the most highly doped films and that the active region of such cells must be made with considerably lower doping densities. For polycrystalline films on alumina, preliminary results indicate that the hole densities obtained are not sufficient to overcome grain boundary barrier limited conductivity.
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U2 - 10.1016/0379-6787(89)90023-9
DO - 10.1016/0379-6787(89)90023-9
M3 - Article
AN - SCOPUS:0024750273
SN - 0927-0248
VL - 27
SP - 137
EP - 147
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 1-4
ER -