Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing, P. D. Wang, A. M. Mintairov, Sang Hoon Lee, U. Bindley, C. H. Chen, S. S. Shi, J. K. Furdyna, J. L. Merz, G. L. Snider

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

Original languageEnglish
Pages (from-to)2652-2655
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number6
Publication statusPublished - 1997 Nov 1
Externally publishedYes

Fingerprint

Semiconductor quantum wells
quantum wells
damage
blue shift
Ions
ions
Ternary alloys
ternary alloys
Reactive ion etching
Bias voltage
Molecular beam epitaxy
high voltages
Photoluminescence
molecular beam epitaxy
etching
photoluminescence
Plasmas
Electric potential
electric potential
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Sparing, L. M., Wang, P. D., Mintairov, A. M., Lee, S. H., Bindley, U., Chen, C. H., ... Snider, G. L. (1997). Ion induced damage in strained CdZnSe/ZnSe quantum well structures. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 15(6), 2652-2655.

Ion induced damage in strained CdZnSe/ZnSe quantum well structures. / Sparing, L. M.; Wang, P. D.; Mintairov, A. M.; Lee, Sang Hoon; Bindley, U.; Chen, C. H.; Shi, S. S.; Furdyna, J. K.; Merz, J. L.; Snider, G. L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 6, 01.11.1997, p. 2652-2655.

Research output: Contribution to journalArticle

Sparing, LM, Wang, PD, Mintairov, AM, Lee, SH, Bindley, U, Chen, CH, Shi, SS, Furdyna, JK, Merz, JL & Snider, GL 1997, 'Ion induced damage in strained CdZnSe/ZnSe quantum well structures', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 15, no. 6, pp. 2652-2655.
Sparing, L. M. ; Wang, P. D. ; Mintairov, A. M. ; Lee, Sang Hoon ; Bindley, U. ; Chen, C. H. ; Shi, S. S. ; Furdyna, J. K. ; Merz, J. L. ; Snider, G. L. / Ion induced damage in strained CdZnSe/ZnSe quantum well structures. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1997 ; Vol. 15, No. 6. pp. 2652-2655.
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