Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone

Ho Keun Kim, Dong Young Jang, Jun Woo Kim, Kiho Bae, Joon Hyung Shim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) and high temperature (450 °C) using AC impedance spectroscopy. As a result, we have confirmed that the conductivity of ALD YSZ films below 300 °C is greater by several orders of magnitude compared to the nano-scale YSZ thin films synthesized by other conventional techniques. Among the ALD YSZ samples, ALD YSZ fabricated using water showed the highest conductivity while ALD YSZ fabricated using ozone showed the lowest. We have analyzed this result in relation with grain morphology characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and the chemical binding states measured by X-ray photoelectron spectroscopy (XPS).

Original languageEnglish
Pages (from-to)441-445
Number of pages5
JournalThin Solid Films
Volume589
DOIs
Publication statusPublished - 2015 Aug 31

Keywords

  • Atomic layer deposition
  • Ceramic thin film
  • Ionic conductivity
  • Oxidant source
  • Yttria-stabilized zirconia

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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