Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun Yong Ban, Hyun Gi Hong, Do Young Noh, Jung Inn Sohn, Dae Joon Kang, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

Original languageEnglish
Pages (from-to)26-29
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 2006 Aug 25


  • Ag reflector
  • GaN
  • LED
  • Ohmic contact

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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