Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun Yong Ban; Hyun Gi Hong; Do Young Noh; Jung Inn Sohn; Dae Joon Kang; Tae Yeon Seong

doi:10.1016/j.mseb.2006.04.045

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun Yong Ban, Hyun Gi Hong, Do Young Noh, Jung Inn Sohn, Dae Joon Kang, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10^-4 Ω cm² when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

Original language	English
Pages (from-to)	26-29
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	133
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2006.04.045
Publication status	Published - 2006 Aug 25

Keywords

Ag reflector
GaN
LED
Ohmic contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Science(all)
Condensed Matter Physics

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Ban, K. Y., Hong, H. G., Noh, D. Y., Sohn, J. I., Kang, D. J., & Seong, T. Y. (2006). Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 133(1-3), 26-29. https://doi.org/10.1016/j.mseb.2006.04.045

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title = "Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes",

abstract = "We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.",

keywords = "Ag reflector, GaN, LED, Ohmic contact",

author = "Ban, {Keun Yong} and Hong, {Hyun Gi} and Noh, {Do Young} and Sohn, {Jung Inn} and Kang, {Dae Joon} and Seong, {Tae Yeon}",

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T1 - Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

AU - Ban, Keun Yong

AU - Hong, Hyun Gi

AU - Noh, Do Young

AU - Sohn, Jung Inn

AU - Kang, Dae Joon

AU - Seong, Tae Yeon

PY - 2006/8/25

Y1 - 2006/8/25

N2 - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

AB - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

KW - Ag reflector

KW - GaN

KW - LED

KW - Ohmic contact

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