Abstract
We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.
Original language | English |
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Pages (from-to) | 26-29 |
Number of pages | 4 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 133 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2006 Aug 25 |
Keywords
- Ag reflector
- GaN
- LED
- Ohmic contact
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering