Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun Yong Ban, Hyun Gi Hong, Do Young Noh, Jung Inn Sohn, Dae Joon Kang, Tae Yeon Seong

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

Original languageEnglish
Pages (from-to)26-29
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume133
Issue number1-3
DOIs
Publication statusPublished - 2006 Aug 25

Fingerprint

Ultraviolet radiation
reflectors
Light emitting diodes
Diodes
light emitting diodes
Ohmic contacts
low resistance
Contact resistance
contact resistance
interlayers
chips
reflectance
Wavelength
output
air
Electric potential
electric potential
Air
wavelengths
Temperature

Keywords

  • Ag reflector
  • GaN
  • LED
  • Ohmic contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes. / Ban, Keun Yong; Hong, Hyun Gi; Noh, Do Young; Sohn, Jung Inn; Kang, Dae Joon; Seong, Tae Yeon.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 133, No. 1-3, 25.08.2006, p. 26-29.

Research output: Contribution to journalArticle

Ban, Keun Yong ; Hong, Hyun Gi ; Noh, Do Young ; Sohn, Jung Inn ; Kang, Dae Joon ; Seong, Tae Yeon. / Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2006 ; Vol. 133, No. 1-3. pp. 26-29.
@article{e4a90b98dab842f6bde8d229d37aa1fe,
title = "Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes",
abstract = "We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75{\%} at a wavelength of 405 nm, which is somewhat higher than that (∼71{\%}) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.",
keywords = "Ag reflector, GaN, LED, Ohmic contact",
author = "Ban, {Keun Yong} and Hong, {Hyun Gi} and Noh, {Do Young} and Sohn, {Jung Inn} and Kang, {Dae Joon} and Seong, {Tae Yeon}",
year = "2006",
month = "8",
day = "25",
doi = "10.1016/j.mseb.2006.04.045",
language = "English",
volume = "133",
pages = "26--29",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

AU - Ban, Keun Yong

AU - Hong, Hyun Gi

AU - Noh, Do Young

AU - Sohn, Jung Inn

AU - Kang, Dae Joon

AU - Seong, Tae Yeon

PY - 2006/8/25

Y1 - 2006/8/25

N2 - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

AB - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

KW - Ag reflector

KW - GaN

KW - LED

KW - Ohmic contact

UR - http://www.scopus.com/inward/record.url?scp=33747850207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747850207&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2006.04.045

DO - 10.1016/j.mseb.2006.04.045

M3 - Article

AN - SCOPUS:33747850207

VL - 133

SP - 26

EP - 29

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -