Abstract
We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.
| Original language | English |
|---|---|
| Pages (from-to) | 26-29 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 133 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2006 Aug 25 |
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Keywords
- Ag reflector
- GaN
- LED
- Ohmic contact
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes. / Ban, Keun Yong; Hong, Hyun Gi; Noh, Do Young; Sohn, Jung Inn; Kang, Dae Joon; Seong, Tae Yeon.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 133, No. 1-3, 25.08.2006, p. 26-29.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes
AU - Ban, Keun Yong
AU - Hong, Hyun Gi
AU - Noh, Do Young
AU - Sohn, Jung Inn
AU - Kang, Dae Joon
AU - Seong, Tae Yeon
PY - 2006/8/25
Y1 - 2006/8/25
N2 - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.
AB - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.
KW - Ag reflector
KW - GaN
KW - LED
KW - Ohmic contact
UR - http://www.scopus.com/inward/record.url?scp=33747850207&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747850207&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2006.04.045
DO - 10.1016/j.mseb.2006.04.045
M3 - Article
AN - SCOPUS:33747850207
VL - 133
SP - 26
EP - 29
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -