Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun Yong Ban; Hyun Gi Hong; Do Young Noh; Jung Inn Sohn; Dae Joon Kang; Tae Yeon Seong

doi:10.1016/j.mseb.2006.04.045

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun Yong Ban, Hyun Gi Hong, Do Young Noh, Jung Inn Sohn, Dae Joon Kang, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10^-4 Ω cm² when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

Original language	English
Pages (from-to)	26-29
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	133
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2006.04.045
Publication status	Published - 2006 Aug 25

Keywords

Ag reflector
GaN
LED
Ohmic contact

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2006.04.045

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@article{e4a90b98dab842f6bde8d229d37aa1fe,

title = "Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes",

abstract = "We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.",

keywords = "Ag reflector, GaN, LED, Ohmic contact",

author = "Ban, {Keun Yong} and Hong, {Hyun Gi} and Noh, {Do Young} and Sohn, {Jung Inn} and Kang, {Dae Joon} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant no. R01-2006-000-10904-0).",

year = "2006",

month = aug,

day = "25",

doi = "10.1016/j.mseb.2006.04.045",

language = "English",

volume = "133",

pages = "26--29",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

AU - Ban, Keun Yong

AU - Hong, Hyun Gi

AU - Noh, Do Young

AU - Sohn, Jung Inn

AU - Kang, Dae Joon

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant no. R01-2006-000-10904-0).

PY - 2006/8/25

Y1 - 2006/8/25

N2 - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

AB - We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (I-V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10-4 Ω cm2 when annealed at temperatures 330-530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

KW - Ag reflector

KW - GaN

KW - LED

KW - Ohmic contact

UR - http://www.scopus.com/inward/record.url?scp=33747850207&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2006.04.045

DO - 10.1016/j.mseb.2006.04.045

M3 - Article

AN - SCOPUS:33747850207

VL - 133

SP - 26

EP - 29

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Abstract

Keywords

ASJC Scopus subject areas

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