Irradiation effects of 6MeV electron on electrical properties of Al/Al 2O 3/n-Si MOS capacitors

P. Laha, I. Banerjee, A. Bajaj, P. Chakraborty, P. K. Barhai, S. S. Dahiwale, A. K. Das, V. N. Bhoraskar, D. Kim, S. K. Mahapatra

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The influence of 6MeV electron irradiation on the electrical properties of Al/Al 2O 3/n-Si metal-oxide-semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2O 3/n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6MeV electrons at 10kGy, 20kGy, and 30kGy doses, respectively, keeping the dose rate ~1kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB) and interface trap density (D it) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C-V and G/ω-V measurements. Poole-Frenkel coefficient (Β PF) of the MOS capacitors was determined from leakage current (I)-voltage (V) measurement. The leakage current mechanism was proposed from the Β PF value.

Original languageEnglish
Pages (from-to)1600-1605
Number of pages6
JournalRadiation Physics and Chemistry
Volume81
Issue number10
DOIs
Publication statusPublished - 2012 Oct

Keywords

  • Al O
  • Electron irradiation
  • Flat band voltage
  • Interface trap density
  • Leakage current
  • MOS device

ASJC Scopus subject areas

  • Radiation

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