Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

Tae Yeon Seong, S. M. Lee, R. T. Lee, G. B. Stringfellow

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transmission electron microscope and transmission electron diffraction examination (TED) has been performed to investigate effects of Sb doping on ordering in organometallic vapour phase epitaxial (OMVPE) Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 620°C. The TED results show that adding Sb during the OMVPE growth of GaInP leads to a transition in ordering from CuPt type to triple period type (TPO). It is shown that the intensity of the CuPt superspots decreases with increasing Sb/P ratio in the vapour and is absent at a ratio of 8.0 × 104. A further increase in the ratio leads to the formation of TPO that is also reduced with increasing Sb concentration. Addition of [110] or [1̄10] steps by using misoriented substrates has virtually no effects on the TPO.

Original languageEnglish
JournalSurface Science
Volume457
Issue number1
DOIs
Publication statusPublished - 2000 Jun 1
Externally publishedYes

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Vapor phase epitaxy
Organometallics
vapor phase epitaxy
Doping (additives)
Electron diffraction
electron diffraction
examination
Vapors
vapor phases
Epitaxial layers
Substrates
Electron microscopes
electron microscopes
vapors

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy. / Seong, Tae Yeon; Lee, S. M.; Lee, R. T.; Stringfellow, G. B.

In: Surface Science, Vol. 457, No. 1, 01.06.2000.

Research output: Contribution to journalArticle

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