Issues on nanoimprint lithography with a single-layer resist structure

G. Y. Jung, W. Wu, S. Ganapathiappan, D. A A Ohlberg, M. Saif Islam, X. Li, D. L. Olynick, Heon Lee, Y. Chen, S. Y. Wang, W. M. Tong, R. S. Williams

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We summarize our key developments in nanoimprint lithography (NIL) that employs a single layer resist lift-off process: lowering of the imprint temperature (for thermal imprint) and pressure, achieving uniform resist thickness and low residual resist layer thickness in the trenches, and eliminating metal 'rabbit ears' for the single-layer lift-off. In thermal NIL, our requirements for lower operating temperature and pressure motivated us to develop an alternative resist that is a viscous fluid at room temperature and cures at a lower temperature of 70 °C than the operating temperature of the conventional thermal NIL (≈200°C). For UV NIL, we devised a method to dispense the resist onto a hydrophobic mold and use the hydrophilic substrate surface to spread the resist via surface wetting to engineer a continuous and uniform film. We also explored the use of Si(110) substrates as molds to produce features with perfectly vertical side walls, and the use of aqua regia to directly etch away rabbit ears.

Original languageEnglish
Pages (from-to)1331-1335
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number7
DOIs
Publication statusPublished - 2005 Nov 1

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Nanoimprint lithography
lithography
rabbits
ear
operating temperature
Temperature
viscous fluids
engineers
wetting
Molds
Substrates
Wetting
requirements
Metals
room temperature
Engineers
Fluids
metals
Hot Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Jung, G. Y., Wu, W., Ganapathiappan, S., Ohlberg, D. A. A., Saif Islam, M., Li, X., ... Williams, R. S. (2005). Issues on nanoimprint lithography with a single-layer resist structure. Applied Physics A: Materials Science and Processing, 81(7), 1331-1335. https://doi.org/10.1007/s00339-005-3313-2

Issues on nanoimprint lithography with a single-layer resist structure. / Jung, G. Y.; Wu, W.; Ganapathiappan, S.; Ohlberg, D. A A; Saif Islam, M.; Li, X.; Olynick, D. L.; Lee, Heon; Chen, Y.; Wang, S. Y.; Tong, W. M.; Williams, R. S.

In: Applied Physics A: Materials Science and Processing, Vol. 81, No. 7, 01.11.2005, p. 1331-1335.

Research output: Contribution to journalArticle

Jung, GY, Wu, W, Ganapathiappan, S, Ohlberg, DAA, Saif Islam, M, Li, X, Olynick, DL, Lee, H, Chen, Y, Wang, SY, Tong, WM & Williams, RS 2005, 'Issues on nanoimprint lithography with a single-layer resist structure', Applied Physics A: Materials Science and Processing, vol. 81, no. 7, pp. 1331-1335. https://doi.org/10.1007/s00339-005-3313-2
Jung, G. Y. ; Wu, W. ; Ganapathiappan, S. ; Ohlberg, D. A A ; Saif Islam, M. ; Li, X. ; Olynick, D. L. ; Lee, Heon ; Chen, Y. ; Wang, S. Y. ; Tong, W. M. ; Williams, R. S. / Issues on nanoimprint lithography with a single-layer resist structure. In: Applied Physics A: Materials Science and Processing. 2005 ; Vol. 81, No. 7. pp. 1331-1335.
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