Issues on nanoimprint lithography with a single-layer resist structure

G. Y. Jung, W. Wu, S. Ganapathiappan, D. A.A. Ohlberg, M. Saif Islam, X. Li, D. L. Olynick, H. Lee, Y. Chen, S. Y. Wang, W. M. Tong, R. S. Williams

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Abstract

We summarize our key developments in nanoimprint lithography (NIL) that employs a single layer resist lift-off process: lowering of the imprint temperature (for thermal imprint) and pressure, achieving uniform resist thickness and low residual resist layer thickness in the trenches, and eliminating metal 'rabbit ears' for the single-layer lift-off. In thermal NIL, our requirements for lower operating temperature and pressure motivated us to develop an alternative resist that is a viscous fluid at room temperature and cures at a lower temperature of 70 °C than the operating temperature of the conventional thermal NIL (≈200°C). For UV NIL, we devised a method to dispense the resist onto a hydrophobic mold and use the hydrophilic substrate surface to spread the resist via surface wetting to engineer a continuous and uniform film. We also explored the use of Si(110) substrates as molds to produce features with perfectly vertical side walls, and the use of aqua regia to directly etch away rabbit ears.

Original languageEnglish
Pages (from-to)1331-1335
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number7
DOIs
Publication statusPublished - 2005 Nov 1

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Jung, G. Y., Wu, W., Ganapathiappan, S., Ohlberg, D. A. A., Saif Islam, M., Li, X., Olynick, D. L., Lee, H., Chen, Y., Wang, S. Y., Tong, W. M., & Williams, R. S. (2005). Issues on nanoimprint lithography with a single-layer resist structure. Applied Physics A: Materials Science and Processing, 81(7), 1331-1335. https://doi.org/10.1007/s00339-005-3313-2