ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Jae Hoon Lee, Kie Young Woo, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

Original languageEnglish
Pages (from-to)5055-5058
Number of pages4
JournalOptics Letters
Volume38
Issue number23
DOIs
Publication statusPublished - 2013 Dec 1

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Ultraviolet Rays
ITO (semiconductors)
ultraviolet radiation
Electrodes
light emitting diodes
Gases
Temperature
electrodes
transmittance
annealing
crystallinity
absorptivity
sputtering
electrical properties
optical properties
gases

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes. / Lee, Jae Hoon; Woo, Kie Young; Kim, Kyeong Heon; Kim, Hee Dong; Kim, Tae Geun.

In: Optics Letters, Vol. 38, No. 23, 01.12.2013, p. 5055-5058.

Research output: Contribution to journalArticle

Lee, Jae Hoon ; Woo, Kie Young ; Kim, Kyeong Heon ; Kim, Hee Dong ; Kim, Tae Geun. / ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes. In: Optics Letters. 2013 ; Vol. 38, No. 23. pp. 5055-5058.
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