TY - JOUR
T1 - ITO/AlN rod-based hybrid electrodes
T2 - effect of buffer layers in AlN rods on performance of 365-nm light-emitting diodes
AU - Kim, Kyeong Heon
AU - Lee, Tae Ho
AU - Son, Kyung Rock
AU - Kim, Tae Geun
N1 - Funding Information:
Funding: This work was supported by the National Research Foundation of Korea (NRF) [grant number 2016R1A3B1908249 ].
PY - 2019/5/31
Y1 - 2019/5/31
N2 - In this study, hybrid electrodes consisting of AlN rod arrays and surrounding indium tin oxide (ITO) films are proposed, and the effect of buffer layers in AlN rods on the performance of 365-nm light-emitting diodes (LEDs) is investigated. The AlN rod arrays were introduced in the form of ITO/AlN/buffer layers (Cr/Ni or thin ITO) to reduce the area and voltage for electrical breakdown (EBD), which is used to form conductive channels. The surrounding ITO film was used as a current spreading layer. Using this electrode design, we observed improved ohmic behavior and a higher transmittance at 365 nm compared to those of the reference ITO. In addition, both conduction and ohmic conduction mechanisms in the structure comprising a metal, AlN rod film, and p-AlGaN surface were investigated using various analysis tools. As a result, the 365-nm LEDs with thin Cr/Ni buffer layers exhibited a significantly higher light output power, lower forward voltages, and lower leakage currents than the LEDs with thin ITO buffer layers and reference ITOs.
AB - In this study, hybrid electrodes consisting of AlN rod arrays and surrounding indium tin oxide (ITO) films are proposed, and the effect of buffer layers in AlN rods on the performance of 365-nm light-emitting diodes (LEDs) is investigated. The AlN rod arrays were introduced in the form of ITO/AlN/buffer layers (Cr/Ni or thin ITO) to reduce the area and voltage for electrical breakdown (EBD), which is used to form conductive channels. The surrounding ITO film was used as a current spreading layer. Using this electrode design, we observed improved ohmic behavior and a higher transmittance at 365 nm compared to those of the reference ITO. In addition, both conduction and ohmic conduction mechanisms in the structure comprising a metal, AlN rod film, and p-AlGaN surface were investigated using various analysis tools. As a result, the 365-nm LEDs with thin Cr/Ni buffer layers exhibited a significantly higher light output power, lower forward voltages, and lower leakage currents than the LEDs with thin ITO buffer layers and reference ITOs.
KW - Conducting filaments
KW - Electrical breakdown
KW - Transparent conductive electrodes
KW - Ultraviolet light-emitting diodes
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U2 - 10.1016/j.apsusc.2017.11.015
DO - 10.1016/j.apsusc.2017.11.015
M3 - Article
AN - SCOPUS:85034614332
VL - 477
SP - 172
EP - 178
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -