K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure

Liang Hung Lu, Jae Sung Rieh, Pallab Bhattacharya, Linda P.B. Katehi, E. T. Croke, George E. Ponchak, Samuel A. Alterovitz

Research output: Contribution to conferencePaper

Abstract

Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92×0.67 mm2.

Original languageEnglish
Pages17-20
Number of pages4
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 11

Other

OtherProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CityBaltimore, MD, USA
Period98/6/798/6/11

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lu, L. H., Rieh, J. S., Bhattacharya, P., Katehi, L. P. B., Croke, E. T., Ponchak, G. E., & Alterovitz, S. A. (1998). K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure. 17-20. Paper presented at Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Baltimore, MD, USA, .