Abstract
In a semiconductor manufacturing process, defect cause analysis is a challenging task because the process includes consecutive fabrication phases involving numerous facilities. Recently, in accordance with the shrinking chip pitches, fabrication (FAB) processes require advanced facilities and designs for manufacturing microcircuits. However, the sizes of the particle defects remain constant, in spite of the increasing modernization of the facilities. Consequently, this increases the particle defect ratio. Therefore, this study proposes a particle defect management method for the reduction of the defect ratio. The proposed method provides a kernel-density-based particle map that can overcome the limitations of the conventional method. The method consists of two phases. The first phase is the acquisition of cumulative coordinates of the defect locations on the wafer using the FAB database. Subsequently, this cumulative data is used to generate a particle defect map based on the estimation of kernel density; this map establishes the advanced monitoring statistics. In order to validate this method, we conduct an experiment for comparison with the previous industrial method.
| Original language | English |
|---|---|
| Article number | 224 |
| Journal | Applied Sciences (Switzerland) |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2018 Feb 1 |
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Keywords
- Kernel density estimation
- Particle defect management
- Particle map
- Semiconductor manufacturing process
ASJC Scopus subject areas
- Materials Science(all)
- Instrumentation
- Engineering(all)
- Process Chemistry and Technology
- Computer Science Applications
- Fluid Flow and Transfer Processes
Cite this
Kernel-density-based particle defect management for semiconductor manufacturing facilities. / Park, Seung Hwan; Kim, Sehoon; Baek, Jun-Geol.
In: Applied Sciences (Switzerland), Vol. 8, No. 2, 224, 01.02.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Kernel-density-based particle defect management for semiconductor manufacturing facilities
AU - Park, Seung Hwan
AU - Kim, Sehoon
AU - Baek, Jun-Geol
PY - 2018/2/1
Y1 - 2018/2/1
N2 - In a semiconductor manufacturing process, defect cause analysis is a challenging task because the process includes consecutive fabrication phases involving numerous facilities. Recently, in accordance with the shrinking chip pitches, fabrication (FAB) processes require advanced facilities and designs for manufacturing microcircuits. However, the sizes of the particle defects remain constant, in spite of the increasing modernization of the facilities. Consequently, this increases the particle defect ratio. Therefore, this study proposes a particle defect management method for the reduction of the defect ratio. The proposed method provides a kernel-density-based particle map that can overcome the limitations of the conventional method. The method consists of two phases. The first phase is the acquisition of cumulative coordinates of the defect locations on the wafer using the FAB database. Subsequently, this cumulative data is used to generate a particle defect map based on the estimation of kernel density; this map establishes the advanced monitoring statistics. In order to validate this method, we conduct an experiment for comparison with the previous industrial method.
AB - In a semiconductor manufacturing process, defect cause analysis is a challenging task because the process includes consecutive fabrication phases involving numerous facilities. Recently, in accordance with the shrinking chip pitches, fabrication (FAB) processes require advanced facilities and designs for manufacturing microcircuits. However, the sizes of the particle defects remain constant, in spite of the increasing modernization of the facilities. Consequently, this increases the particle defect ratio. Therefore, this study proposes a particle defect management method for the reduction of the defect ratio. The proposed method provides a kernel-density-based particle map that can overcome the limitations of the conventional method. The method consists of two phases. The first phase is the acquisition of cumulative coordinates of the defect locations on the wafer using the FAB database. Subsequently, this cumulative data is used to generate a particle defect map based on the estimation of kernel density; this map establishes the advanced monitoring statistics. In order to validate this method, we conduct an experiment for comparison with the previous industrial method.
KW - Kernel density estimation
KW - Particle defect management
KW - Particle map
KW - Semiconductor manufacturing process
UR - http://www.scopus.com/inward/record.url?scp=85041589375&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041589375&partnerID=8YFLogxK
U2 - 10.3390/app8020224
DO - 10.3390/app8020224
M3 - Article
AN - SCOPUS:85041589375
VL - 8
JO - Applied Sciences (Switzerland)
JF - Applied Sciences (Switzerland)
SN - 2076-3417
IS - 2
M1 - 224
ER -