Kinetics of SiC Formation on Graphite Using N 2 -CO-SiO and N 2 -CO-H 2 -SiO Gas Mixtures

Joon Seok Oh, Joonho Lee

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Abstract

The formation of SiC on a graphite surface through the reaction between SiO gas and C was investigated. Experiments were conducted at 1843 K, 1873 K, and 1903 K (1570 °C, 1600 °C, and 1630 °C) under N 2 -CO-SiO or N 2 -CO-H 2 -SiO gas mixture atmospheres. The formation rate of SiC on the graphite increased with the increasing temperature and with the decreasing partial pressure of CO gas. The forward (k f ) and backward (k b ) reaction rate constants of SiC formation with SiO gas were obtained as follows: ln k f (mol / c m 2 · s · atm) = 29.175 - 76 , 083 / T ln k b (mol / c m 2 · s · atm) = 53.518 - 129 , 072 / T Under the N 2 -CO-H 2 -SiO gas mixture atmosphere, the formation rate of SiC on the graphite increased. It was observed that the formation of SiC whiskers was enhanced by the catalytic reaction in liquid Fe-based nanodroplets.

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Carbon Monoxide
Gas mixtures
gas mixtures
graphite
Kinetics
Gases
kinetics
Partial pressure
Reaction rates
gases
Rate constants
atmospheres
Liquids
partial pressure
reaction kinetics
Experiments
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liquids
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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@article{fb8d4d44f2a14126b8b6a8485fc2d029,
title = "Kinetics of SiC Formation on Graphite Using N 2 -CO-SiO and N 2 -CO-H 2 -SiO Gas Mixtures",
abstract = "The formation of SiC on a graphite surface through the reaction between SiO gas and C was investigated. Experiments were conducted at 1843 K, 1873 K, and 1903 K (1570 °C, 1600 °C, and 1630 °C) under N 2 -CO-SiO or N 2 -CO-H 2 -SiO gas mixture atmospheres. The formation rate of SiC on the graphite increased with the increasing temperature and with the decreasing partial pressure of CO gas. The forward (k f ) and backward (k b ) reaction rate constants of SiC formation with SiO gas were obtained as follows: ln k f (mol / c m 2 · s · atm) = 29.175 - 76 , 083 / T ln k b (mol / c m 2 · s · atm) = 53.518 - 129 , 072 / T Under the N 2 -CO-H 2 -SiO gas mixture atmosphere, the formation rate of SiC on the graphite increased. It was observed that the formation of SiC whiskers was enhanced by the catalytic reaction in liquid Fe-based nanodroplets.",
author = "Oh, {Joon Seok} and Joonho Lee",
year = "2019",
month = "1",
day = "1",
doi = "10.1007/s11663-019-01598-w",
language = "English",
journal = "Metallurgical and Materials Transactions B",
issn = "0360-2141",
publisher = "ASM International",

}

TY - JOUR

T1 - Kinetics of SiC Formation on Graphite Using N 2 -CO-SiO and N 2 -CO-H 2 -SiO Gas Mixtures

AU - Oh, Joon Seok

AU - Lee, Joonho

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The formation of SiC on a graphite surface through the reaction between SiO gas and C was investigated. Experiments were conducted at 1843 K, 1873 K, and 1903 K (1570 °C, 1600 °C, and 1630 °C) under N 2 -CO-SiO or N 2 -CO-H 2 -SiO gas mixture atmospheres. The formation rate of SiC on the graphite increased with the increasing temperature and with the decreasing partial pressure of CO gas. The forward (k f ) and backward (k b ) reaction rate constants of SiC formation with SiO gas were obtained as follows: ln k f (mol / c m 2 · s · atm) = 29.175 - 76 , 083 / T ln k b (mol / c m 2 · s · atm) = 53.518 - 129 , 072 / T Under the N 2 -CO-H 2 -SiO gas mixture atmosphere, the formation rate of SiC on the graphite increased. It was observed that the formation of SiC whiskers was enhanced by the catalytic reaction in liquid Fe-based nanodroplets.

AB - The formation of SiC on a graphite surface through the reaction between SiO gas and C was investigated. Experiments were conducted at 1843 K, 1873 K, and 1903 K (1570 °C, 1600 °C, and 1630 °C) under N 2 -CO-SiO or N 2 -CO-H 2 -SiO gas mixture atmospheres. The formation rate of SiC on the graphite increased with the increasing temperature and with the decreasing partial pressure of CO gas. The forward (k f ) and backward (k b ) reaction rate constants of SiC formation with SiO gas were obtained as follows: ln k f (mol / c m 2 · s · atm) = 29.175 - 76 , 083 / T ln k b (mol / c m 2 · s · atm) = 53.518 - 129 , 072 / T Under the N 2 -CO-H 2 -SiO gas mixture atmosphere, the formation rate of SiC on the graphite increased. It was observed that the formation of SiC whiskers was enhanced by the catalytic reaction in liquid Fe-based nanodroplets.

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U2 - 10.1007/s11663-019-01598-w

DO - 10.1007/s11663-019-01598-w

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JO - Metallurgical and Materials Transactions B

JF - Metallurgical and Materials Transactions B

SN - 0360-2141

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