Kink-free design of submicron MRAM cell

K. J. Lee, Wanjun Park

Research output: Contribution to journalConference article

Abstract

Micromagnetic simulations were performed for broad range of saturation magnetizations, for studying the domain dynamics in magnetoresistive random access memory (MRAM) cells. Studies showed that kink formation occurred only for the case of large saturation magnetizations and thickness, that resulted from vortex formation. For the aspect ratio of 1.5 (0.3νm×0.2νm), a kink-free region was obtained.

Original languageEnglish
Pages (from-to)ED02
JournalDigests of the Intermag Conference
Publication statusPublished - 2003
Externally publishedYes
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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