Kink-free design of submicron MRAM cell

Kyoung Jin Lee, Wanjun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Micromagnetic simulations were performed for broad range of saturation magnetizations, for studying the domain dynamics in magnetoresistive random access memory (MRAM) cells. Studies showed that kink formation occurred only for the case of large saturation magnetizations and thickness, that resulted from vortex formation. For the aspect ratio of 1.5 (0.3νm×0.2νm), a kink-free region was obtained.

Original languageEnglish
Title of host publicationDigests of the Intermag Conference
Publication statusPublished - 2003
Externally publishedYes
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

Other

OtherIntermag 2003: International Magnetics Conference
CountryUnited States
CityBoston, MA
Period03/3/2803/4/3

Fingerprint

MRAM devices
Saturation magnetization
Aspect ratio
Vortex flow

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, K. J., & Park, W. (2003). Kink-free design of submicron MRAM cell. In Digests of the Intermag Conference

Kink-free design of submicron MRAM cell. / Lee, Kyoung Jin; Park, Wanjun.

Digests of the Intermag Conference. 2003.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, KJ & Park, W 2003, Kink-free design of submicron MRAM cell. in Digests of the Intermag Conference. Intermag 2003: International Magnetics Conference, Boston, MA, United States, 03/3/28.
Lee KJ, Park W. Kink-free design of submicron MRAM cell. In Digests of the Intermag Conference. 2003
Lee, Kyoung Jin ; Park, Wanjun. / Kink-free design of submicron MRAM cell. Digests of the Intermag Conference. 2003.
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