Micromagnetic simulations were performed for broad range of saturation magnetizations, for studying the domain dynamics in magnetoresistive random access memory (MRAM) cells. Studies showed that kink formation occurred only for the case of large saturation magnetizations and thickness, that resulted from vortex formation. For the aspect ratio of 1.5 (0.3νm×0.2νm), a kink-free region was obtained.
ASJC Scopus subject areas
- Electrical and Electronic Engineering