Kondo effect of an antidot in the integer quantum Hall regime: A microscopic calculation

H. S. Sim, N. Y. Hwang, M. Kataoka, Hangmo Yi, Mahn-Soo Choi, Sung Ryul Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present.

Original languageEnglish
Pages (from-to)554-557
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004 Apr 1

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Kondo effect
integers
Electrons
Electronic properties
Semiconductor quantum dots
electrons
Physical properties
physical properties
quantum dots
Geometry
geometry
electronics

Keywords

  • Antidot
  • Kondo effect
  • Quantum Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kondo effect of an antidot in the integer quantum Hall regime : A microscopic calculation. / Sim, H. S.; Hwang, N. Y.; Kataoka, M.; Yi, Hangmo; Choi, Mahn-Soo; Yang, Sung Ryul.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 22, No. 1-3, 01.04.2004, p. 554-557.

Research output: Contribution to journalArticle

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