Kondo effect of an antidot in the integer quantum Hall regime: A microscopic calculation

H. S. Sim, N. Y. Hwang, M. Kataoka, Hangmo Yi, M. S. Choi, S. R.Eric Yang

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present.

Original languageEnglish
Pages (from-to)554-557
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004 Apr
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Antidot
  • Kondo effect
  • Quantum Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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