A nanogap embedded complementary metal oxide semiconductor (NeCMOS) is demonstrated as a proof-of-concept for label-free detection of DNA sequence. When a partially carved nanogap between a gate and a silicon channel is filled with charged biomolecules, the gate dielectric constant and charges are changed. When the gate oxide thickness reduces, the threshold voltage is significantly affected by a change of the charges, whereas it is scarcely influenced by a change of the dielectric constant. In the case of DNA, those two factors act on the threshold voltage oppositely in an n-channel NeCMOS but collaboratively in a p-channel NeCMOS because of the negative charges of DNA. Hence, a p-channel NeCMOS with a thin gate oxide is more attractive for DNA detection because it enhances the shift of threshold voltage; that is, it improves the sensitivity of DNA detection. In addition, the shift of threshold voltage according to the nanogap length is also investigated and the longer nanogap shows more shift of the threshold voltage.
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering