Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

Jong Moon Yoon, Hu Young Jeong, Sung Hoon Hong, You Yin, Hyoung Seok Moon, Seong Jun Jeong, Jun Hee Han, Yong In Kim, Yong Tae Kim, Heon Lee, Sang Ouk Kim, Jeong Yong Lee

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Abstract

We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge 2Sb 2Te 5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch -2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.

Original languageEnglish
Pages (from-to)1347-1351
Number of pages5
JournalJournal of Materials Chemistry
Volume22
Issue number4
DOIs
Publication statusPublished - 2012 Jan 28

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ASJC Scopus subject areas

  • Materials Chemistry
  • Chemistry(all)

Cite this

Yoon, J. M., Jeong, H. Y., Hong, S. H., Yin, Y., Moon, H. S., Jeong, S. J., Han, J. H., Kim, Y. I., Kim, Y. T., Lee, H., Kim, S. O., & Lee, J. Y. (2012). Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory. Journal of Materials Chemistry, 22(4), 1347-1351. https://doi.org/10.1039/c1jm14190b