Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

Jong Moon Yoon, Hu Young Jeong, Sung Hoon Hong, You Yin, Hyoung Seok Moon, Seong Jun Jeong, Jun Hee Han, Yong In Kim, Yong Tae Kim, Heon Lee, Sang Ouk Kim, Jeong Yong Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge 2Sb 2Te 5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch -2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.

Original languageEnglish
Pages (from-to)1347-1351
Number of pages5
JournalJournal of Materials Chemistry
Volume22
Issue number4
DOIs
Publication statusPublished - 2012 Jan 28

Fingerprint

Phase change memory
Fabrication
Electric power utilization
Phase change materials
Crystallization
Lithography
Block copolymers
Etching
Antennas
Electric potential

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemistry(all)

Cite this

Yoon, J. M., Jeong, H. Y., Hong, S. H., Yin, Y., Moon, H. S., Jeong, S. J., ... Lee, J. Y. (2012). Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory. Journal of Materials Chemistry, 22(4), 1347-1351. https://doi.org/10.1039/c1jm14190b

Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory. / Yoon, Jong Moon; Jeong, Hu Young; Hong, Sung Hoon; Yin, You; Moon, Hyoung Seok; Jeong, Seong Jun; Han, Jun Hee; Kim, Yong In; Kim, Yong Tae; Lee, Heon; Kim, Sang Ouk; Lee, Jeong Yong.

In: Journal of Materials Chemistry, Vol. 22, No. 4, 28.01.2012, p. 1347-1351.

Research output: Contribution to journalArticle

Yoon, JM, Jeong, HY, Hong, SH, Yin, Y, Moon, HS, Jeong, SJ, Han, JH, Kim, YI, Kim, YT, Lee, H, Kim, SO & Lee, JY 2012, 'Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory', Journal of Materials Chemistry, vol. 22, no. 4, pp. 1347-1351. https://doi.org/10.1039/c1jm14190b
Yoon, Jong Moon ; Jeong, Hu Young ; Hong, Sung Hoon ; Yin, You ; Moon, Hyoung Seok ; Jeong, Seong Jun ; Han, Jun Hee ; Kim, Yong In ; Kim, Yong Tae ; Lee, Heon ; Kim, Sang Ouk ; Lee, Jeong Yong. / Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory. In: Journal of Materials Chemistry. 2012 ; Vol. 22, No. 4. pp. 1347-1351.
@article{5ecd5249ec8d429db471c6d9d9f79e51,
title = "Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory",
abstract = "We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge 2Sb 2Te 5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch -2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.",
author = "Yoon, {Jong Moon} and Jeong, {Hu Young} and Hong, {Sung Hoon} and You Yin and Moon, {Hyoung Seok} and Jeong, {Seong Jun} and Han, {Jun Hee} and Kim, {Yong In} and Kim, {Yong Tae} and Heon Lee and Kim, {Sang Ouk} and Lee, {Jeong Yong}",
year = "2012",
month = "1",
day = "28",
doi = "10.1039/c1jm14190b",
language = "English",
volume = "22",
pages = "1347--1351",
journal = "Journal of Materials Chemistry",
issn = "0959-9428",
publisher = "Royal Society of Chemistry",
number = "4",

}

TY - JOUR

T1 - Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

AU - Yoon, Jong Moon

AU - Jeong, Hu Young

AU - Hong, Sung Hoon

AU - Yin, You

AU - Moon, Hyoung Seok

AU - Jeong, Seong Jun

AU - Han, Jun Hee

AU - Kim, Yong In

AU - Kim, Yong Tae

AU - Lee, Heon

AU - Kim, Sang Ouk

AU - Lee, Jeong Yong

PY - 2012/1/28

Y1 - 2012/1/28

N2 - We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge 2Sb 2Te 5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch -2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.

AB - We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge 2Sb 2Te 5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: ∼207 Gbit inch -2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 μA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.

UR - http://www.scopus.com/inward/record.url?scp=84855398683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855398683&partnerID=8YFLogxK

U2 - 10.1039/c1jm14190b

DO - 10.1039/c1jm14190b

M3 - Article

VL - 22

SP - 1347

EP - 1351

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 4

ER -