Large-area suspended graphene on GaN nanopillars

Chongmin Lee, Byung Jae Kim, Fan Ren, S. J. Pearton, Ji Hyun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The authors have demonstrated large-area suspended graphene on GaN nanopillars predefined by nanosphere lithography and inductively coupled plasma etching. The graphene was successfully suspended over large areas without ripples and corrugations. Scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy were used to characterize the properties of the suspended graphene on nanopillars. The thermal properties of the suspended and supported graphene were investigated by varying the underlying GaN nanopilllar geometries from flat-top to sharp-cone morphologies and heating the resulting structures via irradiation with laser powers of 1.53 mW, 8.03 mW, and 16.19 mW. The heat transfer was effective even when the contact area between the suspended graphene and the supporting substrate was small, due to the high thermal conductivities of graphene and GaN. The extremely high thermal conductivity of the graphene can improve the thermal management in GaN-based high power electronic and optoelectronics devices, a critical factor for their long-term reliability.

Original languageEnglish
Article number060601
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume29
Issue number6
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

Graphene
graphene
Thermal conductivity
thermal conductivity
Plasma etching
Nanospheres
Inductively coupled plasma
plasma etching
optoelectronic devices
Power electronics
ripples
Temperature control
Optoelectronic devices
Lithography
Raman spectroscopy
Cones
Atomic force microscopy
cones
Thermodynamic properties
lithography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Large-area suspended graphene on GaN nanopillars. / Lee, Chongmin; Kim, Byung Jae; Ren, Fan; Pearton, S. J.; Kim, Ji Hyun.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 29, No. 6, 060601, 01.11.2011.

Research output: Contribution to journalArticle

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