Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C

Min Gyu Kang, Kwang Hwan Cho, Young Ho Do, Young Jin Lee, Sahn Nahm, Seok Jin Yoon, Chong-Yun Kang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.

Original languageEnglish
Article number242910
JournalApplied Physics Letters
Volume101
Issue number24
DOIs
Publication statusPublished - 2012 Dec 10

Fingerprint

laser annealing
excimer lasers
permittivity
thin films
sol-gel processes
lasers
dielectric properties
grain size

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C. / Kang, Min Gyu; Cho, Kwang Hwan; Ho Do, Young; Lee, Young Jin; Nahm, Sahn; Yoon, Seok Jin; Kang, Chong-Yun.

In: Applied Physics Letters, Vol. 101, No. 24, 242910, 10.12.2012.

Research output: Contribution to journalArticle

Kang, Min Gyu ; Cho, Kwang Hwan ; Ho Do, Young ; Lee, Young Jin ; Nahm, Sahn ; Yoon, Seok Jin ; Kang, Chong-Yun. / Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C. In: Applied Physics Letters. 2012 ; Vol. 101, No. 24.
@article{fdc29be1a9fc407093cda8f9c0364fd9,
title = "Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C",
abstract = "We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.",
author = "Kang, {Min Gyu} and Cho, {Kwang Hwan} and {Ho Do}, Young and Lee, {Young Jin} and Sahn Nahm and Yoon, {Seok Jin} and Chong-Yun Kang",
year = "2012",
month = "12",
day = "10",
doi = "10.1063/1.4770307",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Large in-plane permittivity of Ba0.6Sr0.4TiO 3 thin films crystallized using excimer laser annealing at 300°C

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Ho Do, Young

AU - Lee, Young Jin

AU - Nahm, Sahn

AU - Yoon, Seok Jin

AU - Kang, Chong-Yun

PY - 2012/12/10

Y1 - 2012/12/10

N2 - We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.

AB - We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.

UR - http://www.scopus.com/inward/record.url?scp=84871328631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871328631&partnerID=8YFLogxK

U2 - 10.1063/1.4770307

DO - 10.1063/1.4770307

M3 - Article

AN - SCOPUS:84871328631

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242910

ER -