Large magnetoresistance in square-shaped hybrid magnet-semiconductor device

Jinki Hong, Kungwon Rhie, Kyung Ho Shin, Kihyun Kim, S. U. Kim, B. C. Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)


We have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this effect can be understood in terms of a spatially varying Hall conductivity and a geometrical effect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.

Original languageEnglish
Pages (from-to)354-358
Number of pages5
JournalJournal of the Korean Physical Society
Issue number2
Publication statusPublished - 2005 Aug 1



  • 2DEG
  • Hall angle
  • InAs
  • Magnetic sensor
  • Magnetoresistance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hong, J., Rhie, K., Shin, K. H., Kim, K., Kim, S. U., & Lee, B. C. (2005). Large magnetoresistance in square-shaped hybrid magnet-semiconductor device. Journal of the Korean Physical Society, 47(2), 354-358.