We have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this effect can be understood in terms of a spatially varying Hall conductivity and a geometrical effect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2005 Aug 1|
- Hall angle
- Magnetic sensor
ASJC Scopus subject areas
- Physics and Astronomy(all)