Large resistive-switching phenomena observed in Ag/Si3N 4/Al memory cells

Hee Dong Kim, Ho Myoung An, Kyoung Chan Kim, Yujeong Seo, Ki Hyun Nam, Hong Bay Chung, Eui Bok Lee, Tae Geun Kim

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61 Citations (Scopus)

Abstract

An effective resistive-switching effect has been observed in silicon nitride (Si3N4) dielectrics in Ag/Si3N 4/Al memory cells. The ratio of the low resistance to high resistance state was larger than 107 at 1.2 V for a 10 nm thick Si 3N4 layer. This switching behavior is attributed to a change in the conductivity of the Si3N4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si3N4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images.

Original languageEnglish
Article number065002
JournalSemiconductor Science and Technology
Volume25
Issue number6
DOIs
Publication statusPublished - 2010 May 21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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