Large resistive-switching phenomena observed in Ag/Si3N 4/Al memory cells

Hee Dong Kim, Ho Myoung An, Kyoung Chan Kim, Yujeong Seo, Ki Hyun Nam, Hong Bay Chung, Eui Bok Lee, Tae Geun Kim

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

An effective resistive-switching effect has been observed in silicon nitride (Si3N4) dielectrics in Ag/Si3N 4/Al memory cells. The ratio of the low resistance to high resistance state was larger than 107 at 1.2 V for a 10 nm thick Si 3N4 layer. This switching behavior is attributed to a change in the conductivity of the Si3N4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si3N4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images.

Original languageEnglish
Article number065002
JournalSemiconductor Science and Technology
Volume25
Issue number6
DOIs
Publication statusPublished - 2010 May 21

Fingerprint

Data storage equipment
Bias voltage
cells
Silicon nitride
Nitrides
Atomic force microscopy
Dissolution
low resistance
high resistance
silicon nitrides
nitrides
Electrons
dissolving
traps
atomic force microscopy
conductivity
electric potential
silicon nitride
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Large resistive-switching phenomena observed in Ag/Si3N 4/Al memory cells. / Kim, Hee Dong; An, Ho Myoung; Kim, Kyoung Chan; Seo, Yujeong; Nam, Ki Hyun; Chung, Hong Bay; Lee, Eui Bok; Kim, Tae Geun.

In: Semiconductor Science and Technology, Vol. 25, No. 6, 065002, 21.05.2010.

Research output: Contribution to journalArticle

Kim, Hee Dong ; An, Ho Myoung ; Kim, Kyoung Chan ; Seo, Yujeong ; Nam, Ki Hyun ; Chung, Hong Bay ; Lee, Eui Bok ; Kim, Tae Geun. / Large resistive-switching phenomena observed in Ag/Si3N 4/Al memory cells. In: Semiconductor Science and Technology. 2010 ; Vol. 25, No. 6.
@article{a83ed5853b98417c908464a9eff74359,
title = "Large resistive-switching phenomena observed in Ag/Si3N 4/Al memory cells",
abstract = "An effective resistive-switching effect has been observed in silicon nitride (Si3N4) dielectrics in Ag/Si3N 4/Al memory cells. The ratio of the low resistance to high resistance state was larger than 107 at 1.2 V for a 10 nm thick Si 3N4 layer. This switching behavior is attributed to a change in the conductivity of the Si3N4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si3N4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images.",
author = "Kim, {Hee Dong} and An, {Ho Myoung} and Kim, {Kyoung Chan} and Yujeong Seo and Nam, {Ki Hyun} and Chung, {Hong Bay} and Lee, {Eui Bok} and Kim, {Tae Geun}",
year = "2010",
month = "5",
day = "21",
doi = "10.1088/0268-1242/25/6/065002",
language = "English",
volume = "25",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "6",

}

TY - JOUR

T1 - Large resistive-switching phenomena observed in Ag/Si3N 4/Al memory cells

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Kyoung Chan

AU - Seo, Yujeong

AU - Nam, Ki Hyun

AU - Chung, Hong Bay

AU - Lee, Eui Bok

AU - Kim, Tae Geun

PY - 2010/5/21

Y1 - 2010/5/21

N2 - An effective resistive-switching effect has been observed in silicon nitride (Si3N4) dielectrics in Ag/Si3N 4/Al memory cells. The ratio of the low resistance to high resistance state was larger than 107 at 1.2 V for a 10 nm thick Si 3N4 layer. This switching behavior is attributed to a change in the conductivity of the Si3N4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si3N4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images.

AB - An effective resistive-switching effect has been observed in silicon nitride (Si3N4) dielectrics in Ag/Si3N 4/Al memory cells. The ratio of the low resistance to high resistance state was larger than 107 at 1.2 V for a 10 nm thick Si 3N4 layer. This switching behavior is attributed to a change in the conductivity of the Si3N4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si3N4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images.

UR - http://www.scopus.com/inward/record.url?scp=77952407108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952407108&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/25/6/065002

DO - 10.1088/0268-1242/25/6/065002

M3 - Article

AN - SCOPUS:77952407108

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

M1 - 065002

ER -