Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3using a liquid gallium squeezing technique

Hyunik Park, Yongha Choi, Sujung Yang, Jinho Bae, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

β-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of β-Ga2O3 to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size β-Ga2O3 sheets using a liquid gallium squeezing technique. The GaOx nanolayer produced by stamping liquid gallium under the Cabrera-Mott oxidation was converted into few-atom-thick β-Ga2O3 via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO2, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D β-Ga2O3 on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a β-Ga2O3 layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional β-Ga2O3 growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner.

Original languageEnglish
Article number033409
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume39
Issue number3
DOIs
Publication statusPublished - 2021 May 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Large-scale synthesis of atomically thin ultrawide bandgap β-Ga<sub>2</sub>O<sub>3</sub>using a liquid gallium squeezing technique'. Together they form a unique fingerprint.

Cite this