TY - JOUR
T1 - Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3using a liquid gallium squeezing technique
AU - Park, Hyunik
AU - Choi, Yongha
AU - Yang, Sujung
AU - Bae, Jinho
AU - Kim, Jihyun
N1 - Funding Information:
This research was supported by the National Research Foundation (NRF) funded by the Ministry of Science and ICT (Nos. 2017M1A2A2087351 and 2020M3H4A3081799).
Publisher Copyright:
© 2021 Author(s).
PY - 2021/5/1
Y1 - 2021/5/1
N2 - β-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of β-Ga2O3 to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size β-Ga2O3 sheets using a liquid gallium squeezing technique. The GaOx nanolayer produced by stamping liquid gallium under the Cabrera-Mott oxidation was converted into few-atom-thick β-Ga2O3 via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO2, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D β-Ga2O3 on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a β-Ga2O3 layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional β-Ga2O3 growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner.
AB - β-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of β-Ga2O3 to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size β-Ga2O3 sheets using a liquid gallium squeezing technique. The GaOx nanolayer produced by stamping liquid gallium under the Cabrera-Mott oxidation was converted into few-atom-thick β-Ga2O3 via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO2, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D β-Ga2O3 on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a β-Ga2O3 layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional β-Ga2O3 growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner.
UR - http://www.scopus.com/inward/record.url?scp=85103438231&partnerID=8YFLogxK
U2 - 10.1116/6.0000927
DO - 10.1116/6.0000927
M3 - Article
AN - SCOPUS:85103438231
VL - 39
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 3
M1 - 033409
ER -