Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

Travis Anderson, Fan Ren, Stephen J. Pearton, Michael A. Mastro, Ron T. Holm, Rich L. Henry, Charles R. Eddy, Joon Yeob Lee, Kwan Young Lee, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Laser drilling for through-via holes was performed with a Nd: YVO 4 laser for an AlGaN/GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristics before and after laser drilling were compared to examine the effect of laser drilling on device performance. The electrical characteristics of the HEMTs did not show significant change after laser drilling, even when performed in close proximity to the device. Laser drilling was found to be a fast and safe technique to drill via hole in AlGaN/GaN HEMT structure and provides an alternative to dry etching for creation of these vias.

Original languageEnglish
Pages (from-to)2246-2249
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number5
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures'. Together they form a unique fingerprint.

Cite this