Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

Travis Anderson, Fan Ren, Stephen J. Pearton, Michael A. Mastro, Ron T. Holm, Rich L. Henry, Charles R. Eddy, Joon Yeob Lee, Kwan Young Lee, Ji Hyun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Laser drilling for through-via holes was performed with a Nd: YVO 4 laser for an AlGaN/GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristics before and after laser drilling were compared to examine the effect of laser drilling on device performance. The electrical characteristics of the HEMTs did not show significant change after laser drilling, even when performed in close proximity to the device. Laser drilling was found to be a fast and safe technique to drill via hole in AlGaN/GaN HEMT structure and provides an alternative to dry etching for creation of these vias.

Original languageEnglish
Pages (from-to)2246-2249
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number5
DOIs
Publication statusPublished - 2006 Oct 9

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laser drilling
High electron mobility transistors
Laser ablation
high electron mobility transistors
laser ablation
Drilling
Lasers
transconductance
Dry etching
Transconductance
proximity
etching
electric potential
Electric potential
lasers
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures. / Anderson, Travis; Ren, Fan; Pearton, Stephen J.; Mastro, Michael A.; Holm, Ron T.; Henry, Rich L.; Eddy, Charles R.; Lee, Joon Yeob; Lee, Kwan Young; Kim, Ji Hyun.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 5, 09.10.2006, p. 2246-2249.

Research output: Contribution to journalArticle

Anderson, Travis ; Ren, Fan ; Pearton, Stephen J. ; Mastro, Michael A. ; Holm, Ron T. ; Henry, Rich L. ; Eddy, Charles R. ; Lee, Joon Yeob ; Lee, Kwan Young ; Kim, Ji Hyun. / Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2006 ; Vol. 24, No. 5. pp. 2246-2249.
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AU - Henry, Rich L.

AU - Eddy, Charles R.

AU - Lee, Joon Yeob

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AU - Kim, Ji Hyun

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