Abstract
We developed a novel cost effective process scheme for the fabrication of highly efficient selective emitter solar cells, which uses a laser doping method combined with an etch back process. The laser doping process using a 150. ns pulse width green (532. nm) laser effectively controls the doping profiles to form a selective emitter. However, laser damage was created on the laser-doped surface and eventually the performances and stabilities of laser-doped cells were degraded due to this damage. Using a transmission electron microscope (TEM), the damage was examined and found to have a thickness of 40. nm of amorphous silicon. This thin damage layer was effectively removed in an acid mixture solution. The combined process of laser doping and etch back is called the laser etch back process. After removal of this thin damage layer, the cell efficiencies were significantly improved up to 19.17%.
| Original language | English |
|---|---|
| Pages (from-to) | 105-110 |
| Number of pages | 6 |
| Journal | Solar Energy |
| Volume | 109 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Nov 1 |
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ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
Cite this
Laser etch back process to fabricate highly efficient selective emitter c-Si solar cells. / Kim, Myungsu; Kim, Donghwan; Kim, Dongseop; Kang, Yoon Mook.
In: Solar Energy, Vol. 109, No. 1, 01.11.2014, p. 105-110.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Laser etch back process to fabricate highly efficient selective emitter c-Si solar cells
AU - Kim, Myungsu
AU - Kim, Donghwan
AU - Kim, Dongseop
AU - Kang, Yoon Mook
PY - 2014/11/1
Y1 - 2014/11/1
N2 - We developed a novel cost effective process scheme for the fabrication of highly efficient selective emitter solar cells, which uses a laser doping method combined with an etch back process. The laser doping process using a 150. ns pulse width green (532. nm) laser effectively controls the doping profiles to form a selective emitter. However, laser damage was created on the laser-doped surface and eventually the performances and stabilities of laser-doped cells were degraded due to this damage. Using a transmission electron microscope (TEM), the damage was examined and found to have a thickness of 40. nm of amorphous silicon. This thin damage layer was effectively removed in an acid mixture solution. The combined process of laser doping and etch back is called the laser etch back process. After removal of this thin damage layer, the cell efficiencies were significantly improved up to 19.17%.
AB - We developed a novel cost effective process scheme for the fabrication of highly efficient selective emitter solar cells, which uses a laser doping method combined with an etch back process. The laser doping process using a 150. ns pulse width green (532. nm) laser effectively controls the doping profiles to form a selective emitter. However, laser damage was created on the laser-doped surface and eventually the performances and stabilities of laser-doped cells were degraded due to this damage. Using a transmission electron microscope (TEM), the damage was examined and found to have a thickness of 40. nm of amorphous silicon. This thin damage layer was effectively removed in an acid mixture solution. The combined process of laser doping and etch back is called the laser etch back process. After removal of this thin damage layer, the cell efficiencies were significantly improved up to 19.17%.
KW - Etch back
KW - High efficiency
KW - Laser doping
KW - Selective emitter
UR - http://www.scopus.com/inward/record.url?scp=84908204810&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84908204810&partnerID=8YFLogxK
U2 - 10.1016/j.solener.2014.08.022
DO - 10.1016/j.solener.2014.08.022
M3 - Article
AN - SCOPUS:84908204810
VL - 109
SP - 105
EP - 110
JO - Solar Energy
JF - Solar Energy
SN - 0038-092X
IS - 1
ER -