Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode

Kwang Woong Kim, Nam Ki Cho, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In 0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10-50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm2 under a pulsed operation and 247 A/cm2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.

Original languageEnglish
Title of host publicationOptoelectronic Materials and Devices
DOIs
Publication statusPublished - 2006
EventOptoelectronic Materials and Devices - Gwangju, Korea, Republic of
Duration: 2006 Sep 52006 Sep 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6352 II
ISSN (Print)0277-786X

Other

OtherOptoelectronic Materials and Devices
CountryKorea, Republic of
CityGwangju
Period06/9/506/9/7

Keywords

  • Al GaAs cladding layer
  • HGTSL
  • InAs/GaAs quantum dot
  • Laser diode
  • Simultaneous lasing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, K. W., Cho, N. K., Song, J. D., Choi, W. J., Lee, J. I., & Park, J. H. (2006). Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode. In Optoelectronic Materials and Devices [63522G] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6352 II). https://doi.org/10.1117/12.691596