Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode

Kwang Woong Kim, Nam Ki Cho, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In 0.15Ga 0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10-50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm 2 under a pulsed operation and 247 A/cm 2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6352 II
DOIs
Publication statusPublished - 2006 Dec 27
EventOptoelectronic Materials and Devices - Gwangju, Korea, Republic of
Duration: 2006 Sep 52006 Sep 7

Other

OtherOptoelectronic Materials and Devices
CountryKorea, Republic of
CityGwangju
Period06/9/506/9/7

Fingerprint

Atomic layer epitaxy
Quantum dot lasers
atomic layer epitaxy
Semiconductor lasers
lasing
semiconductor lasers
quantum dots
ridges
Threshold current density
Ridge waveguides
Wavelength
modulation doping
Growth temperature
cavities
Excited states
Molecular beam epitaxy
Temperature
Ground state
Semiconductor quantum wells
Semiconductor quantum dots

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Kim, K. W., Cho, N. K., Song, J. D., Choi, W. J., Lee, J. I., & Park, J. H. (2006). Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6352 II). [63522G] https://doi.org/10.1117/12.691596

Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode. / Kim, Kwang Woong; Cho, Nam Ki; Song, Jin Dong; Choi, Won Jun; Lee, Jung Il; Park, Jung ho.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6352 II 2006. 63522G.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, KW, Cho, NK, Song, JD, Choi, WJ, Lee, JI & Park, JH 2006, Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6352 II, 63522G, Optoelectronic Materials and Devices, Gwangju, Korea, Republic of, 06/9/5. https://doi.org/10.1117/12.691596
Kim KW, Cho NK, Song JD, Choi WJ, Lee JI, Park JH. Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6352 II. 2006. 63522G https://doi.org/10.1117/12.691596
Kim, Kwang Woong ; Cho, Nam Ki ; Song, Jin Dong ; Choi, Won Jun ; Lee, Jung Il ; Park, Jung ho. / Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6352 II 2006.
@inproceedings{5ced64abd4264a8a81d7d115b0673d93,
title = "Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode",
abstract = "We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In 0.15Ga 0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10-50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm 2 under a pulsed operation and 247 A/cm 2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.",
keywords = "Al Ga As cladding layer, HGTSL, InAs/GaAs quantum dot, Laser diode, Simultaneous lasing",
author = "Kim, {Kwang Woong} and Cho, {Nam Ki} and Song, {Jin Dong} and Choi, {Won Jun} and Lee, {Jung Il} and Park, {Jung ho}",
year = "2006",
month = "12",
day = "27",
doi = "10.1117/12.691596",
language = "English",
isbn = "0819464473",
volume = "6352 II",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode

AU - Kim, Kwang Woong

AU - Cho, Nam Ki

AU - Song, Jin Dong

AU - Choi, Won Jun

AU - Lee, Jung Il

AU - Park, Jung ho

PY - 2006/12/27

Y1 - 2006/12/27

N2 - We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In 0.15Ga 0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10-50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm 2 under a pulsed operation and 247 A/cm 2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.

AB - We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In 0.15Ga 0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10-50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm 2 under a pulsed operation and 247 A/cm 2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.

KW - Al Ga As cladding layer

KW - HGTSL

KW - InAs/GaAs quantum dot

KW - Laser diode

KW - Simultaneous lasing

UR - http://www.scopus.com/inward/record.url?scp=33845652182&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845652182&partnerID=8YFLogxK

U2 - 10.1117/12.691596

DO - 10.1117/12.691596

M3 - Conference contribution

AN - SCOPUS:33845652182

SN - 0819464473

SN - 9780819464477

VL - 6352 II

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -