Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Tae Geun Kim, Eun Kyu Kim, Chang Sik Son, Seong Il Kim, Jichai Jeong, Suk Ki Min, Si Jong Leem, Jong Il Jun, Hae Wang Lee, Jung ho Park, Tae Yeon Seong, Sung Won Jun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors Anon
PublisherIEEE
Pages326-327
Number of pages2
Volume1
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) - Boston, MA, USA
Duration: 1996 Nov 181996 Nov 19

Other

OtherProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2)
CityBoston, MA, USA
Period96/11/1896/11/19

Fingerprint

Semiconductor quantum wires
Lasers
Schematic diagrams
Buffer layers
Quantum efficiency
Ion implantation
Semiconductor lasers
Photoluminescence
Protons
Optical properties
Transmission electron microscopy
Wavelength
Substrates
Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Kim, T. G., Kim, E. K., Son, C. S., Kim, S. I., Jeong, J., Min, S. K., ... Jun, S. W. (1996). Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer. In Anon (Ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 1, pp. 326-327). IEEE.

Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer. / Kim, Tae Geun; Kim, Eun Kyu; Son, Chang Sik; Kim, Seong Il; Jeong, Jichai; Min, Suk Ki; Leem, Si Jong; Jun, Jong Il; Lee, Hae Wang; Park, Jung ho; Seong, Tae Yeon; Jun, Sung Won.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. ed. / Anon. Vol. 1 IEEE, 1996. p. 326-327.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, TG, Kim, EK, Son, CS, Kim, SI, Jeong, J, Min, SK, Leem, SJ, Jun, JI, Lee, HW, Park, JH, Seong, TY & Jun, SW 1996, Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer. in Anon (ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 1, IEEE, pp. 326-327, Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2), Boston, MA, USA, 96/11/18.
Kim TG, Kim EK, Son CS, Kim SI, Jeong J, Min SK et al. Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer. In Anon, editor, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1. IEEE. 1996. p. 326-327
Kim, Tae Geun ; Kim, Eun Kyu ; Son, Chang Sik ; Kim, Seong Il ; Jeong, Jichai ; Min, Suk Ki ; Leem, Si Jong ; Jun, Jong Il ; Lee, Hae Wang ; Park, Jung ho ; Seong, Tae Yeon ; Jun, Sung Won. / Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. editor / Anon. Vol. 1 IEEE, 1996. pp. 326-327
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abstract = "Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20{\%} and the lasing wavelength was 826 nm.",
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AU - Kim, Tae Geun

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AU - Son, Chang Sik

AU - Kim, Seong Il

AU - Jeong, Jichai

AU - Min, Suk Ki

AU - Leem, Si Jong

AU - Jun, Jong Il

AU - Lee, Hae Wang

AU - Park, Jung ho

AU - Seong, Tae Yeon

AU - Jun, Sung Won

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AB - Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.

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