Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Tae Geun Kim, Eun Kyu Kim, Chang Sik Son, Seong Il Kim, Jichai Jeong, Suk Ki Min, Si Jong Leem, Jong Il Jun, Hae Wang Lee, Jung Ho Park, Tae Yeon Seong, Sung Won Jun

Research output: Contribution to journalConference article

Abstract

Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.

Original languageEnglish
Pages (from-to)326-327
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - 1996
EventProceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) - Boston, MA, USA
Duration: 1996 Nov 181996 Nov 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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