Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy

Jin Dong Song, Young Woo Ok, Jong Min Kim, Yong Tak Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) is employed to investigate the structural properties of (GaP)/(InP) short-period superlattices (SPS) grown at temperatures in the range of 425-490 °C by solid source molecular beam epitaxy. TEM results show that lateral composition modulation (LCM) is formed in the SPS layers grown at temperatures above 460 °C. Transmission electron diffraction results show that CuPt ordering occurs in all samples. It is shown that the degree of order increases, reaches a maximum at 460 °C, and then decreases, as the growth temperature increases. Photoluminescence examination (at 9 K) shows that the samples experience a reduction in band gap, which is in the range of 55-221 meV, as the growth temperature increases. The reduction is attributed to the combined effects of the LCM and CuPt-type ordering.

Original languageEnglish
Pages (from-to)5086-5089
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number10
DOIs
Publication statusPublished - 2001 Nov 15
Externally publishedYes

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superlattices
molecular beam epitaxy
modulation
transmission electron microscopy
temperature
electron diffraction
examination
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy. / Song, Jin Dong; Ok, Young Woo; Kim, Jong Min; Lee, Yong Tak; Seong, Tae Yeon.

In: Journal of Applied Physics, Vol. 90, No. 10, 15.11.2001, p. 5086-5089.

Research output: Contribution to journalArticle

Song, Jin Dong ; Ok, Young Woo ; Kim, Jong Min ; Lee, Yong Tak ; Seong, Tae Yeon. / Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy. In: Journal of Applied Physics. 2001 ; Vol. 90, No. 10. pp. 5086-5089.
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