Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy

Jin Dong Song; Young Woo Ok; Jong Min Kim; Yong Tak Lee; Tae Yeon Seong

doi:10.1063/1.1412267

Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy

Jin Dong Song, Young Woo Ok, Jong Min Kim, Yong Tak Lee, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) is employed to investigate the structural properties of (GaP)/(InP) short-period superlattices (SPS) grown at temperatures in the range of 425-490 °C by solid source molecular beam epitaxy. TEM results show that lateral composition modulation (LCM) is formed in the SPS layers grown at temperatures above 460 °C. Transmission electron diffraction results show that CuPt ordering occurs in all samples. It is shown that the degree of order increases, reaches a maximum at 460 °C, and then decreases, as the growth temperature increases. Photoluminescence examination (at 9 K) shows that the samples experience a reduction in band gap, which is in the range of 55-221 meV, as the growth temperature increases. The reduction is attributed to the combined effects of the LCM and CuPt-type ordering.

Original language	English
Pages (from-to)	5086-5089
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	10
DOIs	https://doi.org/10.1063/1.1412267
Publication status	Published - 2001 Nov 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1412267

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title = "Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy",

abstract = "Transmission electron microscopy (TEM) is employed to investigate the structural properties of (GaP)/(InP) short-period superlattices (SPS) grown at temperatures in the range of 425-490 °C by solid source molecular beam epitaxy. TEM results show that lateral composition modulation (LCM) is formed in the SPS layers grown at temperatures above 460 °C. Transmission electron diffraction results show that CuPt ordering occurs in all samples. It is shown that the degree of order increases, reaches a maximum at 460 °C, and then decreases, as the growth temperature increases. Photoluminescence examination (at 9 K) shows that the samples experience a reduction in band gap, which is in the range of 55-221 meV, as the growth temperature increases. The reduction is attributed to the combined effects of the LCM and CuPt-type ordering.",

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T1 - Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy

AU - Song, Jin Dong

AU - Ok, Young Woo

AU - Kim, Jong Min

AU - Lee, Yong Tak

AU - Seong, Tae Yeon

PY - 2001/11/15

Y1 - 2001/11/15

N2 - Transmission electron microscopy (TEM) is employed to investigate the structural properties of (GaP)/(InP) short-period superlattices (SPS) grown at temperatures in the range of 425-490 °C by solid source molecular beam epitaxy. TEM results show that lateral composition modulation (LCM) is formed in the SPS layers grown at temperatures above 460 °C. Transmission electron diffraction results show that CuPt ordering occurs in all samples. It is shown that the degree of order increases, reaches a maximum at 460 °C, and then decreases, as the growth temperature increases. Photoluminescence examination (at 9 K) shows that the samples experience a reduction in band gap, which is in the range of 55-221 meV, as the growth temperature increases. The reduction is attributed to the combined effects of the LCM and CuPt-type ordering.

AB - Transmission electron microscopy (TEM) is employed to investigate the structural properties of (GaP)/(InP) short-period superlattices (SPS) grown at temperatures in the range of 425-490 °C by solid source molecular beam epitaxy. TEM results show that lateral composition modulation (LCM) is formed in the SPS layers grown at temperatures above 460 °C. Transmission electron diffraction results show that CuPt ordering occurs in all samples. It is shown that the degree of order increases, reaches a maximum at 460 °C, and then decreases, as the growth temperature increases. Photoluminescence examination (at 9 K) shows that the samples experience a reduction in band gap, which is in the range of 55-221 meV, as the growth temperature increases. The reduction is attributed to the combined effects of the LCM and CuPt-type ordering.

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Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy

Abstract

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