Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots

S. W. Lee, Tae Geun Kim, K. Hirakawa, J. S. Kim, H. Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120-400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages520-521
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

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Keywords

  • Ge quantum dot
  • Infrared photodetector
  • Photocurrent

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Lee, S. W., Kim, T. G., Hirakawa, K., Kim, J. S., & Cho, H. Y. (2006). Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 520-521). [4388883] https://doi.org/10.1109/NMDC.2006.4388883