Abstract
We have investigated lateral conduction mid-infrared photodetectors using the photoionization of holes in the valence band of self-assembled Ge/Si quantum dots. A mid-infrared photocurrent signal was observed in the photon energy range of 140-400 meV resulting from an intersubband transition in the valence band of self-assembled Ge quantum dots and subsequent lateral transport of photoexcited carriers in the SiGe conduction channel. The peak responsivity was 134 mA W-1 at a photon energy of 240 meV at T = 10 K. Furthermore, the band structure of the Ge QD system was estimated using electrical and optical measurements.
| Original language | English |
|---|---|
| Article number | 105403 |
| Journal | Nanotechnology |
| Volume | 18 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2007 Mar 14 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
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Lee, S. W., Kim, T. G., Hirakawa, K., Kim, J. S., Choi, S. H., & Cho, H. Y. (2007). Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots. Nanotechnology, 18(10), [105403]. https://doi.org/10.1088/0957-4484/18/10/105403