Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots

S. W. Lee, T. G. Kim, K. Hirakawa, J. S. Kim, S. H. Choi, H. Y. Cho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have investigated lateral conduction mid-infrared photodetectors using the photoionization of holes in the valence band of self-assembled Ge/Si quantum dots. A mid-infrared photocurrent signal was observed in the photon energy range of 140-400 meV resulting from an intersubband transition in the valence band of self-assembled Ge quantum dots and subsequent lateral transport of photoexcited carriers in the SiGe conduction channel. The peak responsivity was 134 mA W-1 at a photon energy of 240 meV at T = 10 K. Furthermore, the band structure of the Ge QD system was estimated using electrical and optical measurements.

Original languageEnglish
Article number105403
JournalNanotechnology
Volume18
Issue number10
DOIs
Publication statusPublished - 2007 Mar 14

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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